Infineon IRFR24N15DTRPBF HEXFET® MOSFET

Infineon IRFR24N15DTRPBF HEXFET® MOSFET: High-Performance Power Transistor for Demanding Applications

Infineon Technologies' IRFR24N15DTRPBF HEXFET® MOSFET represents the pinnacle of power transistor innovation, combining robust performance with advanced engineering to meet the demands of modern electronic systems. This N-Channel MOSFET delivers exceptional efficiency, reliability, and thermal management capabilities, making it an ideal choice for power-hungry applications across industrial, automotive, and consumer electronics sectors.

Technical Excellence in Power Management

Engineered with Infineon's proprietary HEXFET® technology, the IRFR24N15DTRPBF MOSFET features a 150V drain-to-source voltage rating and a continuous drain current capacity of 24A at 25°C. Its optimized R_DS(on) of 95mΩ at 14A and 10V gate-source voltage ensures minimal conduction losses, translating to improved energy efficiency and reduced heat generation. The device's 45nC gate charge (Q_g) at 10V further enhances switching performance, enabling faster transitions and lower dynamic losses in high-frequency applications.

Designed for durability, this power transistor operates across extreme temperatures (-55°C to 175°C) while maintaining stability under demanding conditions. Its ±30V gate-source voltage rating provides enhanced protection against voltage spikes, while the 890pF input capacitance (C_iss) at 25V ensures compatibility with standard gate drivers.

Advanced Packaging for Thermal Efficiency

Housed in Infineon's industry-standard D-Pak (TO-252-3) surface-mount package, the IRFR24N15DTRPBF balances compact form factor with superior thermal dissipation. This packaging solution enables 140W power dissipation at case temperature, ensuring reliable operation even under sustained high-current conditions. The tape-and-reel packaging format facilitates automated PCB assembly, making it suitable for high-volume manufacturing processes.

The device's 5V gate threshold voltage (V_GS(th)) at 250µA allows compatibility with common logic-level controllers while maintaining immunity to unintended turn-on. This characteristic, combined with the absence of inherent latch-up susceptibility in MOSFETs, enhances system reliability in critical applications.

Applications and System Integration

This versatile power transistor excels in diverse applications including:

• Industrial motor drives and automation systems
• Power supplies and DC-DC converters
• Uninterruptible power supply (UPS) systems
• Electric vehicle charging infrastructure
• Consumer electronics power management

Its combination of high voltage capability and moderate current rating makes it particularly well-suited for applications requiring efficient power switching in space-constrained environments. The IRFR24N15DTRPBF's robust design also makes it an excellent choice for automotive systems where vibration resistance and thermal cycling endurance are critical.

Performance Advantages

Compared to traditional bipolar junction transistors (BJTs), the IRFR24N15DTRPBF offers significant advantages:

These performance enhancements translate directly into real-world benefits: reduced component count in gate drive circuits, smaller heat sinking requirements, and overall system efficiency improvements that can exceed 15% in typical switching applications.

Quality and Reliability Assurance

As part of Infineon's HEXFET® family, the IRFR24N15DTRPBF undergoes rigorous testing to ensure compliance with industry standards. The device maintains stable electrical characteristics through 1,000+ temperature cycles (-55°C to 175°C) and demonstrates exceptional resistance to humidity (85°C/85% RH) in accelerated life testing. With a 100% production test at 150% rated voltage, users can trust its performance in mission-critical applications.

Design Considerations and Best Practices

For optimal performance, designers should consider the following recommendations:

1. Implement proper gate drive circuitry with 10V supply for minimum R_DS(on)
2. Use thermal vias in PCB layout to enhance heat dissipation
3. Implement snubber circuits for inductive load switching
4. Follow Infineon's recommended PCB footprint for D-Pak packaging
5. Derate current rating based on operating temperature

When paralleling multiple devices, ensure matched R_DS(on) characteristics and symmetrical PCB layout to promote current sharing. For high-speed switching applications, minimize gate loop inductance through careful layout practices.

Competitive Landscape Positioning

While competing solutions from ON Semiconductor and STMicroelectronics offer comparable voltage ratings, the IRFR24N15DTRPBF distinguishes itself through:

• 9% lower R_DS(on) vs. industry average
• 15% higher thermal conductivity packaging
• Integrated ESD protection structures
• Comprehensive documentation and design tools

Infineon's extensive application engineering support, including SPICE models and thermal simulation tools, further streamlines the design process for system integrators.

Future-Proof Power Solution

As industries transition toward more energy-efficient systems, the IRFR24N15DTRPBF's performance characteristics position it well for evolving standards. Its efficiency advantages directly contribute to reduced carbon footprints in power electronics systems, aligning with global sustainability initiatives. The device's compatibility with emerging wide-bandgap semiconductor technologies makes it a versatile component in hybrid power architectures.

With a quoted unit price of $1.67 and volume pricing available at $0.35 in quantities of 6000+, this MOSFET offers exceptional value for performance-critical applications. Backed by Infineon's 10-year supply commitment, design engineers can confidently implement this component in long-lifecycle projects.

Tags: Power MOSFET, Infineon IRFR24N15DTRPBF, N-Channel Transistor, Industrial Electronics, HEXFET Technology