Infineon IRFB7440PBF MOSFET N-Channel 40V 120A TO-220AB
- Brand: Infineon
- Product Code: IRFB7440PBF
- Availability: In Stock
$0.26
- Ex Tax: $0.26
Revolutionizing Power Management: Infineon IRFB7440PBF MOSFET
In the ever-evolving landscape of power electronics, the Infineon IRFB7440PBF MOSFET emerges as a game-changer, combining cutting-edge technology with exceptional performance. This N-Channel HEXFET® power transistor, engineered by Infineon Technologies, redefines efficiency standards for high-current applications. With its robust TO-220AB package and impressive 120A continuous drain current capability, this device caters to modern power systems demanding both reliability and miniaturization.
Technical Excellence in Power Discrete Design
The IRFB7440PBF showcases Infineon's mastery in semiconductor engineering through its optimized MOSFET architecture. Operating at 40V with an ultra-low on-resistance of just 2.5mΩ at 10V gate-source voltage, this transistor minimizes conduction losses while maintaining exceptional thermal performance. Its advanced gate charge management system, featuring 135nC typical gate charge, enables rapid switching transitions without compromising on stability.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 40V |
| Continuous Drain Current | 120A |
| On-Resistance | 2.5mΩ |
| Gate Charge | 135nC |
| Operating Temperature | -55°C to 175°C |
Performance-Driven Features for Demanding Applications
Beyond its impressive specifications, the IRFB7440PBF delivers tangible benefits for real-world implementations. The device's ±20V gate-source voltage rating provides enhanced operational flexibility, while its 4730pF input capacitance ensures stable performance across varying load conditions. With 143W power dissipation capability and a 3.9V maximum threshold voltage, this MOSFET maintains consistent performance in extreme environments.
This power transistor's versatility shines in diverse applications including DC-DC converters, motor control systems, and high-efficiency power supplies. Its through-hole TO-220-3 package combines mechanical durability with excellent thermal dissipation characteristics, making it ideal for industrial and automotive environments where reliability is paramount.
Why Choose Infineon's IRFB7440PBF?
Infineon Technologies' commitment to quality is evident in every aspect of this MOSFET's design. The device's 100µA gate-source threshold current ensures precise control in switching applications, while its 6V-10V drive voltage compatibility offers flexibility in gate drive circuit design. Backed by Infineon's reputation for innovation in power semiconductor solutions, this component represents the perfect balance between performance and durability.
For engineers seeking to push the boundaries of power density and efficiency, the IRFB7440PBF offers unparalleled advantages. Its advanced packaging technology reduces parasitic inductance, improving switching performance while maintaining electrical integrity. The device's compliance with industry-standard footprints simplifies design integration while future-proofing power system architectures.
Tags: Power MOSFET, HEXFET, TO-220AB, Infineon Components, High-Current Transistor