Infineon IRFB4615PBF HEXFET MOSFET N-Channel 150V 35A TO-220AB
- Brand: Infineon
- Product Code: IRFB4615PBF
- Availability: In Stock
$0.66
- Ex Tax: $0.66
Infineon IRFB4615PBF HEXFET MOSFET: Power Handling Excellence for Demanding Applications
As power electronics evolve to meet the demands of modern industrial and automotive systems, Infineon Technologies continues to set benchmarks with its HEXFET® product line. The IRFB4615PBF HEXFET MOSFET represents a perfect blend of robust design, efficiency, and reliability. This N-channel power transistor operates at 150V with a continuous drain current of 35A, making it ideal for high-stress environments where thermal stability and performance consistency matter most.
Key Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 150 V |
| Continuous Drain Current (Id) | 35A @ 25°C |
| Rds(on) Max | 39mΩ @ 21A, 10V |
| Gate Charge (Qg) | 26 nC @ 10V |
| Operating Temperature | -55°C to 175°C (TJ) |
Beyond its technical specifications, the IRFB4615PBF demonstrates exceptional thermal performance through its TO-220AB packaging. This through-hole device achieves 144W power dissipation (Tc) while maintaining gate voltage protection up to ±20V. Its 5V gate threshold voltage at 100µA ensures compatibility with standard logic circuits while minimizing switching losses in high-frequency operations.
From an engineering perspective, this MOSFET's 1750pF input capacitance at 50V enables efficient switching in power supply designs. The device's active status in production guarantees long-term supply stability for critical applications like motor drives, solar inverters, and electric vehicle systems. Designers appreciate the HEXFET® architecture's ability to maintain performance across extreme temperatures, a crucial factor for automotive electronics in under-hood environments.
Performance Comparison
| Feature | IRFB4615PBF | Industry Standard |
|---|---|---|
| Max Voltage | 150V | 100V |
| Rds(on) Resistance | 39mΩ | 50mΩ |
| Power Dissipation | 144W | 100W |
When compared to standard MOSFETs, the IRFB4615PBF demonstrates 30% better conductivity while handling 50% higher voltage loads. This performance advantage translates directly to smaller heatsink requirements and reduced system weight - critical factors in aerospace and portable equipment designs. The 10V drive voltage optimization ensures minimal gate driver losses while maintaining full enhancement of the channel region.
For industrial automation engineers, this component offers significant advantages in programmable logic controller (PLC) power stages. Its ability to withstand repetitive avalanche energy makes it particularly suitable for inductive load switching in factory automation systems. Additionally, the device's compliance with RoHS and REACH regulations ensures market acceptance across global manufacturing operations.
The IRFB4615PBF's TO-220-3 package format provides mechanical durability while maintaining electrical isolation standards. This three-pin configuration simplifies PCB layout in both new designs and equipment upgrades. When sourcing this component through authorized distributors, designers gain access to production traceability and quality assurance programs essential for mission-critical applications.
Tags: power electronics, industrial mosfet, automotive components, to-220ab transistor, high voltage fet