Infineon IRFB4610PBF HEXFET MOSFET N-Channel 100V 73A TO-220AB

Infineon IRFB4610PBF: High-Performance N-Channel MOSFET for Demanding Applications

When it comes to power electronics, the Infineon IRFB4610PBF HEXFET N-Channel MOSFET stands out as a reliable and efficient solution. Designed for high-current and high-voltage applications, this transistor delivers exceptional performance in industrial, automotive, and power supply systems. With a robust 100V drain-source voltage rating and a continuous drain current of 73A, the IRFB4610PBF is engineered to handle the most demanding scenarios while maintaining thermal stability and energy efficiency.

Key Technical Specifications

The IRFB4610PBF features a low on-state resistance (Rds(on)) of just 14mΩ at 44A and 10V gate-source voltage, minimizing power loss and heat generation. Its advanced HEXFET technology ensures superior switching performance, with a gate charge (Qg) of 140nC at 10V. The device operates safely within a wide temperature range (-55°C to 175°C) and can dissipate up to 190W of power under optimal conditions. Housed in a TO-220AB package, this through-hole device combines ease of integration with industrial-grade durability.

The IRFB4610PBF's ±20V gate-source voltage tolerance provides additional safety margins in switching applications. Its 3550pF input capacitance at 50V Vds ensures stable operation in high-frequency circuits. The device's 4V gate threshold voltage (at 100µA) enables precise control while maintaining compatibility with standard driver circuits.

Applications and Use Cases

This versatile N-channel MOSFET excels in power conversion systems requiring high efficiency and reliability. Engineers commonly deploy the IRFB4610PBF in:

• Switching power supplies (SMPS) for industrial equipment
• Motor control systems in automotive and robotics applications
• Solar inverters and energy storage systems
• High-current DC-DC converters
• Load switching in industrial automation

Its low conduction losses make it ideal for battery-powered systems where energy efficiency directly impacts operational longevity. The device's thermal performance, combined with Infineon's HEXFET technology, ensures consistent operation even under sustained high-current conditions.

Why Choose Infineon HEXFET Technology?

Infineon's HEXFET MOSFETs are renowned for their advanced trench technology that delivers superior on-resistance and switching characteristics. The IRFB4610PBF benefits from this heritage through:

• Enhanced thermal management via optimized die layout
• Reduced switching losses for improved energy efficiency
• Robust packaging that withstands mechanical stress
• High avalanche energy ratings for improved reliability
• Compliance with industry-standard RoHS and REACH regulations

When compared to alternative solutions, the IRFB4610PBF offers a compelling balance of performance metrics. Its 14mΩ on-resistance outperforms many competing devices in the same voltage class, while maintaining competitive switching speeds. The TO-220AB package provides excellent heat dissipation without requiring specialized mounting techniques.

Installation and Handling Considerations

For optimal performance, designers should consider:

• Implementing adequate heat sinking for continuous operation near maximum ratings
• Using proper gate drive circuits to minimize switching losses
• Observing recommended PCB layout practices to reduce parasitic inductance
• Following Infineon's application guidelines for parallel operation

The device's tube packaging ensures safe handling during assembly processes. While its through-hole design simplifies prototyping, production environments can benefit from automated pick-and-place systems compatible with TO-220 packages.

Tags: Power MOSFET, Infineon IRFB4610PBF, N-Channel Transistor, TO-220AB Device, High Current MOSFET