Infineon IRF7832TRPBF HEXFET MOSFET N-Channel 30V 20A 8-SOIC
- Brand: Infineon
- Product Code: IRF7832TRPBF
- Availability: In Stock
$0.24
- Ex Tax: $0.24
Infineon IRF7832TRPBF HEXFET MOSFET: High-Performance Power Management Solution
In the world of power electronics, the Infineon IRF7832TRPBF HEXFET MOSFET stands out as a benchmark for reliability and efficiency. This N-Channel MOSFET, engineered by Infineon Technologies, delivers exceptional performance in applications demanding precise voltage control and high current handling. With its robust design and advanced HEXFET® technology, the IRF7832TRPBF is ideal for power supplies, motor control systems, and industrial automation equipment.
Key Specifications and Technical Excellence
The IRF7832TRPBF operates at a drain-to-source voltage (Vdss) of 30V, supporting a continuous drain current of 20A at 25°C. Its Rds(on) of just 4mΩ at 10V gate-source voltage ensures minimal power loss, making it highly efficient for switching applications. The device's gate charge (Qg) of 51nC at 4.5V further enhances its suitability for high-frequency operations, reducing switching losses and improving thermal performance.
| Parameter | Value |
|---|---|
| Drain-to-Source Voltage | 30V |
| Continuous Drain Current | 20A |
| Rds(on) Max | 4mΩ @ 10V |
| Gate Charge | 51nC @ 4.5V |
| Operating Temperature | -55°C to 155°C |
Advanced Design for Demanding Applications
Housed in an 8-SOIC surface-mount package, the IRF7832TRPBF combines compact form factor with excellent thermal dissipation. Its ±20V gate-source voltage rating ensures robustness against voltage spikes, while the wide operating temperature range (-55°C to 155°C) makes it suitable for harsh environments. The device's input capacitance of 4310pF at 15V optimizes switching speed without compromising stability.
Engineers designing power management systems will appreciate the IRF7832TRPBF's low on-resistance and fast switching characteristics, which reduce energy waste and improve overall system efficiency. Whether in DC-DC converters, battery management systems, or motor drives, this MOSFET delivers consistent performance under varying load conditions.
Why Choose Infineon's HEXFET IRF7832TRPBF?
Infineon Technologies' reputation for innovation shines through this component. The IRF7832TRPBF's HEXFET® structure minimizes conduction losses while maintaining excellent thermal stability. Its 4mΩ Rds(on) at 20A ensures minimal voltage drop, translating to cooler operation and extended lifespan in power-hungry applications. The device's 2.32V gate threshold voltage enables compatibility with standard logic-level drivers, simplifying circuit design.
For industries requiring automotive-grade reliability or industrial automation precision, this MOSFET offers:
- High avalanche energy rating for improved durability
- Advanced packaging for automated PCB assembly
- RoHS compliance and environmental sustainability
From renewable energy systems to high-performance computing power supplies, the IRF7832TRPBF provides the foundation for next-generation power electronics. Its 2.5W power dissipation rating at ambient temperature ensures reliable operation even in densely packed circuit boards.
Tags: HEXFET MOSFET, Power Management, N-Channel Transistor, Infineon Semiconductor, 8-SOIC Package