Infineon IRF6668TRPBF HEXFET® N-Channel MOSFET | 80V 55A DirectFET MZ

Infineon IRF6668TRPBF: High-Performance HEXFET® N-Channel MOSFET for Demanding Applications

The Infineon IRF6668TRPBF represents the cutting-edge of power semiconductor technology, combining robust performance with advanced design in a compact DirectFET MZ package. As part of Infineon's renowned HEXFET® series, this N-channel MOSFET delivers exceptional efficiency and reliability for engineers working on high-current applications in automotive, industrial, and consumer electronics sectors. With its 80V rating and 55A continuous drain current capability, this device bridges the gap between traditional power MOSFETs and next-generation high-density solutions.

Key Technical Specifications

At the heart of the IRF6668TRPBF's capabilities lies its optimized silicon technology, delivering a remarkably low 15mΩ on-resistance at 12A and 10V gate-source voltage. This performance metric becomes particularly significant in high-power applications where thermal management is critical. The device's 10V gate drive compatibility ensures seamless integration with standard driver circuits, while its ±20V gate-source voltage rating provides robustness against transient conditions.

Advanced Packaging and Thermal Performance

The DirectFET MZ package technology employed in the IRF6668TRPBF marks a significant advancement in thermal management for surface-mount power devices. This innovative packaging approach enables direct heat dissipation through both the top and bottom surfaces, achieving thermal performance comparable to through-hole devices while maintaining the assembly advantages of surface-mount technology. The package's isometric design ensures uniform thermal expansion, minimizing mechanical stress during temperature cycling.

When evaluating the device's power dissipation capabilities, engineers will appreciate its dual thermal ratings: 2.8W in free-air conditions (Ta) and an impressive 89W under controlled thermal conditions (Tc). This flexibility allows for optimized thermal design in various application scenarios, from compact consumer electronics to industrial power supplies requiring high current density.

Design Optimization and Application Considerations

The IRF6668TRPBF's electrical characteristics make it particularly well-suited for synchronous rectification and high-frequency switching applications. Its 1320pF input capacitance at 25V Vds strikes an optimal balance between switching speed and driver compatibility, while the 4.9V maximum gate threshold voltage ensures stable operation across temperature ranges. Designers will find the device's gate charge specification particularly valuable when calculating switching losses in high-frequency converters.

In practical applications, the MOSFET's surface-mount DirectFET package offers several advantages over traditional TO-220 or DPAK devices. The reduced package inductance improves switching performance, while the bidirectional heat dissipation path simplifies PCB layout and thermal management. When designing with this device, particular attention should be paid to gate drive circuitry to ensure the 10V drive requirement is consistently met for optimal performance.

Reliability and Long-Term Performance

Infineon's rigorous qualification process ensures the IRF6668TRPBF meets the highest standards for automotive and industrial applications. The device's operating temperature range of -40°C to 150°C junction temperature makes it suitable for demanding environments, while its robust construction provides excellent resistance to mechanical stress. The device's packaging and die construction have been optimized to withstand the rigors of modern manufacturing processes and field operation.

Conclusion: A Versatile Power Solution

The Infineon IRF6668TRPBF HEXFET® MOSFET stands out as a versatile solution for modern power electronics design. Its combination of high current capability, low on-resistance, and advanced packaging makes it an excellent choice for engineers seeking to optimize performance in applications ranging from motor drives to renewable energy systems. The device's technical specifications, coupled with Infineon's reputation for quality and reliability, position it as a go-to solution for demanding power applications requiring both performance and longevity.

Tags: DirectFET Package