Infineon IRF5802TRPBF MOSFET N-Channel 150V 900mA Micro6™ Transistor

Revolutionizing Power Management with Infineon IRF5802TRPBF MOSFET

In the ever-evolving landscape of electronic components, the Infineon IRF5802TRPBF stands out as a benchmark for high-performance power management solutions. This N-Channel HEXFET® MOSFET, housed in a compact Micro6™ (TSOP-6) package, combines cutting-edge technology with exceptional reliability, making it an indispensable component for modern electronic systems. Designed for applications demanding efficiency, durability, and space-saving design, this transistor exemplifies Infineon's commitment to innovation in semiconductor technology.

Technical Excellence in a Compact Form Factor

The IRF5802TRPBF operates at a drain-to-source voltage (Vdss) of 150V, supporting continuous drain currents up to 900mA at 25°C. Its advanced silicon technology ensures minimal power loss with a maximum Rds(on) of 1.2Ω at 540mA and 10V gate-source voltage. The device's gate charge (Qg) of 6.8nC at 10V further enhances switching efficiency, while its ±30V gate-source voltage rating provides robustness against voltage spikes. Housed in a surface-mount Micro6™ package, this transistor delivers industrial-grade performance in a footprint ideal for space-constrained designs.

Performance-Driven Design Features

Engineered for high-speed switching applications, this MOSFET's 88pF input capacitance at 25V ensures rapid response times critical for power conversion systems. The 5.5V gate threshold voltage (Vgs(th)) enables compatibility with standard logic-level drivers while maintaining thermal stability across diverse operating conditions. Its 2W power dissipation rating at ambient temperature demonstrates superior thermal management capabilities, allowing reliable operation in demanding environments ranging from industrial controls to automotive systems.

The IRF5802TRPBF's active status in Infineon's product line reflects its ongoing relevance in modern electronics. The device's compliance with RoHS standards and tape-and-reel packaging format (TR) facilitates seamless integration into automated manufacturing processes. This transistor's versatility extends across multiple domains, including DC-DC converters, motor control circuits, battery management systems, and load switching applications where efficiency and reliability are paramount.

Applications Across Industries

In consumer electronics, the IRF5802TRPBF enables slimmer device profiles through its TSOP-6 packaging while maintaining high current handling capabilities. Industrial automation systems benefit from its robust -55°C to 150°C operating temperature range, ensuring consistent performance in harsh environments. Automotive engineers leverage its AEC-Q101 qualification potential (when applicable) for under-the-hood applications requiring vibration resistance and thermal cycling durability. The device's low on-resistance and fast switching characteristics also make it ideal for energy-efficient LED lighting systems and portable power tools.

When compared to competing solutions, Infineon's HEXFET® technology provides measurable advantages. The IRF5802TRPBF outperforms standard MOSFETs in thermal cycling tests, maintaining stable electrical characteristics after 10,000 cycles. Its proprietary packaging technology reduces parasitic inductance by 15% compared to conventional SOT-23-6 devices, resulting in cleaner switching waveforms and reduced electromagnetic interference (EMI). These enhancements translate to longer system lifespan and lower maintenance requirements in field deployments.

Optimizing System Design with IRF5802TRPBF

Design engineers can maximize performance by following best practices in PCB layout and thermal management. A 2oz copper pour on drain pads with multiple thermal vias significantly improves heat dissipation. For high-frequency applications above 500kHz, gate resistor values between 2.2Ω and 4.7Ω optimize switching transitions while minimizing oscillations. When paralleling multiple devices, individual gate resistors and Kelvin source connections ensure balanced current distribution. The device's 10V drive voltage recommendation aligns with standard PWM controller outputs, eliminating the need for additional level-shifting circuitry.

Maintenance of this component involves periodic thermal imaging inspections in high-power applications to detect abnormal heating patterns. Storage conditions should maintain humidity levels below 30% RH with temperature control between 15°C and 30°C to prevent moisture absorption in the non-hermetic package. With proper handling, the IRF5802TRPBF provides over 100,000 hours of MTBF (Mean Time Between Failures) in typical operating conditions, contributing to system longevity and reduced downtime.

Tags: High-Power MOSFET