Infineon IRF2807PBF HEXFET® N-Channel MOSFET | 75V 82A TO-220AB

Revolutionizing Power Management: Infineon IRF2807PBF HEXFET® MOSFET

In the realm of power electronics, the Infineon IRF2807PBF HEXFET® N-Channel MOSFET emerges as a groundbreaking solution designed to elevate performance across diverse applications. This advanced transistor combines cutting-edge technology with robust engineering, delivering unparalleled efficiency and reliability for modern electronic systems.

Technical Excellence in Power Transistors

At the heart of the IRF2807PBF lies a sophisticated MOSFET architecture optimized for high-speed switching and minimal power loss. With its 75V drain-to-source voltage rating and 82A continuous drain current capability, this device sets new benchmarks in power handling performance. The proprietary HEXFET® technology employed by Infineon ensures exceptional thermal management characteristics, making it ideal for demanding environments where heat dissipation is critical.

The transistor's 13mΩ on-state resistance at 10V gate-source voltage enables remarkable power efficiency, reducing energy waste and operational costs. This remarkable specification allows engineers to design systems that maintain high performance while meeting stringent energy consumption requirements.

Industrial-Grade Reliability

Engineered for durability, the IRF2807PBF operates flawlessly across extreme temperature ranges (-55°C to 175°C), ensuring consistent performance in both frigid and high-heat environments. Its ±20V gate-source voltage tolerance provides enhanced protection against voltage spikes, while the 160nC gate charge specification contributes to rapid switching capabilities that minimize transition losses.

The TO-220AB package not only facilitates efficient heat dissipation but also simplifies integration into existing PCB layouts. This through-hole mounting solution offers superior mechanical stability, making it particularly suitable for applications subject to vibration or thermal cycling.

Application Versatility

This versatile power transistor excels across multiple domains:

• Automotive power systems
• Industrial motor drives
• Power supply units
• Renewable energy inverters
• Consumer electronics power management

Its combination of high current capacity and fast switching characteristics makes it an ideal choice for applications requiring both robust power handling and precise control.

Design Advantages

Designers benefit from the IRF2807PBF's optimized electrical characteristics that simplify circuit design while enhancing overall system performance. The 4V gate threshold voltage enables compatibility with standard logic circuits, streamlining integration with control systems. The device's 3820pF input capacitance specification contributes to stable operation in high-frequency applications, reducing the need for complex compensation circuitry.

When compared to similar devices in its class, the IRF2807PBF offers a compelling advantage in power dissipation (230W at case temperature), allowing for higher load capacities without compromising reliability. This thermal superiority stems from Infineon's advanced packaging technology that maximizes heat transfer efficiency.

Future-Proof Technology

As industries continue pushing the boundaries of power density and efficiency, the IRF2807PBF represents a forward-thinking solution that meets current demands while providing headroom for future design iterations. Its compliance with RoHS environmental standards demonstrates Infineon's commitment to sustainable electronics manufacturing.

This HEXFET® device embodies the perfect balance between performance and reliability, offering engineers the confidence to innovate without compromising on quality. Whether implementing traditional power supply designs or developing next-generation energy systems, the IRF2807PBF provides a foundation for creating efficient, durable electronic solutions.

Tags: IRF2807PBF, Infineon HEXFET, N-Channel MOSFET, TO-220AB, 75V 82A Transistor