Infineon IRF1405PBF HEXFET Power MOSFET - 55V 169A TO-220AB N-Channel
- Brand: Infineon
- Product Code: IRF1405PBF
- Availability: In Stock
$0.40
- Ex Tax: $0.40
Infineon IRF1405PBF: High-Performance HEXFET Power MOSFET for Demanding Applications
The Infineon IRF1405PBF HEXFET power MOSFET represents a significant advancement in power electronics technology, combining cutting-edge design with exceptional performance metrics. This N-channel MOSFET, featuring a robust TO-220AB package, delivers industry-leading specifications that make it ideal for high-current, high-efficiency power conversion systems. With its 55V drain-source voltage rating and 169A continuous drain current capability, this device sets new standards for power density and thermal management in demanding applications.
Advanced MOSFET Technology
At the heart of the IRF1405PBF lies Infineon's proprietary HEXFET technology, which employs a revolutionary hexagonal cell design to optimize current distribution and minimize resistive losses. This innovative approach results in an exceptionally low RDS(on) of just 5.3mΩ at 101A and 10V gate drive, ensuring minimal power dissipation even under maximum load conditions. The device's ±20V gate voltage tolerance provides enhanced robustness against voltage spikes, while its 260nC gate charge rating enables fast switching performance that reduces switching losses in high-frequency applications.
The IRF1405PBF's thermal performance is equally impressive, with a 330W power dissipation rating (at Tc) that allows reliable operation in demanding environments. Its operating temperature range of -55°C to 175°C (TJ) makes it suitable for both industrial and automotive applications where extreme temperature conditions are common. The TO-220AB package combines through-hole mounting convenience with excellent thermal conductivity, facilitating efficient heat dissipation in typical power supply configurations.
Technical Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 55V |
| Continuous Drain Current (ID) | 169A (at 25°C) |
| RDS(on) Max | 5.3mΩ @ 101A, 10V |
| Gate Charge (Qg) | 260nC @ 10V |
| Operating Temperature | -55°C to 175°C |
Application Versatility
This versatile power MOSFET excels in a wide range of applications where high current handling and efficiency are critical. Its low on-resistance and high current capability make it particularly well-suited for DC-DC converters, motor control systems, and battery management solutions. The device's fast switching characteristics enable high-frequency operation in power supplies and inverters, while its thermal stability ensures reliable performance in automotive electronics and industrial automation systems. The IRF1405PBF's rugged design and comprehensive protection features make it ideal for harsh environments where reliability is paramount.
Design Advantages
Engineers will appreciate the IRF1405PBF's comprehensive design advantages that simplify circuit implementation and improve system performance. The device's 10V drive voltage optimization ensures compatibility with standard gate drive circuits while maintaining minimal conduction losses. Its 4V gate threshold voltage (at 250µA) provides excellent noise immunity in switching applications, and the 5480pF input capacitance (at 25V) enables efficient gate drive circuit design. These characteristics combine to create a device that balances performance, efficiency, and design simplicity.
Tags: MOSFET, HEXFET, Power Transistor, TO-220AB, Power Electronics