Infineon IRF100B201 MOSFET N-Channel 100V 192A TO-220AB

Infineon IRF100B201 MOSFET: Revolutionizing Power Management in High-Performance Applications

In today's rapidly evolving electronics landscape, power transistors play a critical role in determining system efficiency, reliability, and overall performance. The Infineon IRF100B201 MOSFET emerges as a groundbreaking solution designed to meet the demanding requirements of modern industrial and automotive applications. This N-channel power transistor combines cutting-edge HEXFET® technology with Infineon's proven expertise in power semiconductor design to deliver exceptional electrical characteristics and thermal management capabilities.

Technical Breakthroughs in Power Transistor Design

At the heart of the IRF100B201's impressive performance lies its advanced MOSFET architecture. Rated for 100V drain-to-source voltage and capable of handling continuous drain currents up to 192A at 25°C, this device redefines the boundaries of power transistor performance. Its remarkably low Rds(on) of just 4.2mΩ at 115A and 10V gate-source voltage ensures minimal conduction losses, making it ideal for high-efficiency power conversion systems.

The device's optimized gate charge characteristics (255nC @ 10V) enable fast switching operations while maintaining excellent thermal stability. This combination of low on-resistance and controlled switching behavior makes the IRF100B201 particularly suitable for applications requiring high-frequency operation and minimal energy losses. The ±20V gate-source voltage rating provides additional design flexibility while ensuring robust device protection.

Industrial Applications and System Advantages

Engineered for demanding environments, the IRF100B201's TO-220AB package provides excellent thermal dissipation characteristics while maintaining mechanical durability. This makes it particularly well-suited for industrial power supplies, motor control systems, and energy-efficient lighting solutions where reliability under continuous operation is paramount. The device's ability to maintain stable performance across its wide operating temperature range (-55°C to 175°C) ensures consistent operation in both extreme cold and high-temperature environments.

In modern power conversion applications, the IRF100B201's low on-resistance directly translates to reduced power dissipation and improved system efficiency. When compared to conventional power transistors, this device can reduce conduction losses by up to 30%, resulting in significant energy savings and reduced cooling requirements. This efficiency gain is particularly valuable in applications such as electric vehicle charging systems, industrial automation equipment, and high-current DC-DC converters.

Thermal Management and Packaging Excellence

The TO-220AB package design plays a crucial role in the IRF100B201's thermal performance. With a maximum power dissipation rating of 441W (Tc), this device can handle substantial power levels while maintaining safe operating temperatures. The through-hole mounting configuration ensures reliable mechanical connection to PCBs while facilitating effective heat transfer to external heatsinks when required.

One of the key advantages of this packaging design is its compatibility with existing PCB layouts in various power electronics applications. Design engineers can easily integrate the IRF100B201 into new designs or upgrade existing systems without extensive board modifications. The device's robust construction also provides excellent resistance to mechanical stress and vibration, making it suitable for automotive and industrial environments.

Beyond Electrical Specifications: Real-World Performance

While datasheet specifications provide valuable technical insights, the true value of the IRF100B201 becomes evident in practical implementations. In high-current motor control applications, for instance, its low on-resistance and fast switching characteristics enable precise control with minimal energy waste. In power supply designs, the device's excellent thermal stability reduces the need for complex cooling solutions, allowing for more compact and cost-effective systems.

The IRF100B201's gate threshold voltage of 4V at 250µA ensures compatibility with standard logic-level control circuits while maintaining sufficient noise immunity. This feature simplifies driver circuit design and improves system reliability, particularly in noisy industrial environments. The device's high input capacitance (9500pF @ 50V) is carefully optimized to balance switching performance with drive circuit requirements.

Future-Proof Power Solutions

As industries continue their push towards greater energy efficiency and miniaturization, the IRF100B201 represents a perfect balance between performance, reliability, and design flexibility. Its 'StrongIRFET™' technology foundation ensures long-term availability and compatibility with evolving design standards. Whether in renewable energy systems, electric vehicle infrastructure, or advanced industrial automation, this power transistor provides the foundation for next-generation power electronics designs.

For design engineers seeking to create cutting-edge power solutions, the IRF100B201 offers a proven platform that combines Infineon's decades of semiconductor expertise with the practical requirements of modern electronics. Its comprehensive feature set and robust construction make it a reliable choice for applications demanding both high performance and long-term operational stability.

Tags: 100V N-Channel FET