Infineon IR2110PBF Half-Bridge Gate Driver IC

Infineon IR2110PBF Half-Bridge Gate Driver IC

  • Brand: Infineon
  • Product Code: IR2110PBF
  • Availability: In Stock
  • $0.90

  • Ex Tax: $0.90

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Revolutionizing Power Electronics: Infineon IR2110PBF Half-Bridge Gate Driver

The Infineon IR2110PBF Half-Bridge Gate Driver IC represents a paradigm shift in power management technology. Designed for high-performance applications requiring precise control of IGBTs and N-Channel MOSFETs, this 14-DIP packaged marvel combines robust technical specifications with versatile implementation capabilities. As industries demand increasingly efficient power conversion solutions, the IR2110PBF emerges as the ideal component for engineers seeking reliability in demanding environments.

Technical Excellence in Compact Packaging

Engineered with Infineon's signature precision, this gate driver operates across a wide voltage range of 3.3V to 20V, making it adaptable to both low-voltage and high-voltage systems. Its dual-channel configuration delivers 2A peak output current (both source and sink), ensuring rapid switching capabilities essential for modern power electronics. The device's 14-DIP package (7.62mm width) maintains backward compatibility with legacy systems while supporting next-generation designs.

ParameterSpecification
Supply Voltage3.3V - 20V
Output Current2A Peak (Source/Sink)
Switching Speed25ns Rise / 17ns Fall
Operating Temperature-40°C to 150°C

Applications Beyond Conventional Limits

The IR2110PBF's versatility shines in diverse applications from industrial motor drives to renewable energy systems. Its 500V high-side voltage capability enables efficient power delivery in solar inverters and uninterruptible power supplies (UPS). The non-inverting input configuration simplifies control logic integration with microcontrollers and DSPs, while the bootstrap voltage architecture supports continuous operation in high-voltage environments.

Automotive engineers particularly value its thermal resilience, making it ideal for electric vehicle (EV) charging systems and onboard power management. The device's ability to handle extreme temperatures (-40°C to 150°C) without performance degradation ensures reliability in harsh automotive environments.

Design Advantages and System Optimization

What sets this gate driver apart is its balanced engineering approach. The independent channel configuration allows simultaneous control of multiple power devices while maintaining electrical isolation between channels. The 6V/9.5V logic voltage thresholds provide noise immunity in industrial settings, reducing false triggering risks in noisy environments.

Manufacturers benefit from its through-hole mounting design, which offers mechanical stability in vibration-prone applications while maintaining compatibility with automated PCB assembly processes. The active product status signals Infineon's commitment to continuous improvement and long-term supply assurance.

Tags: Power Management, Industrial Automation, MOSFET Driver, Automotive Electronics, High-Speed Switching

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