IRGP4066D-EPBF IGBT Trench Transistor | Infineon 600V 140A Power Device
- Brand: Infineon
- Product Code: IRGP4066D-EPBF
- Availability: In Stock
$5.00
- Ex Tax: $5.00
Revolutionizing Power Electronics with Infineon's IRGP4066D-EPBF IGBT
In the ever-evolving landscape of power electronics, Infineon Technologies continues to set benchmarks with its innovative solutions. The IRGP4066D-EPBF IGBT (Insulated Gate Bipolar Transistor) stands as a testament to this legacy, combining cutting-edge trench technology with robust performance metrics. Designed for high-efficiency applications requiring reliable power management, this device bridges the gap between theoretical design and real-world implementation. Let's explore the technical brilliance and practical applications that make this IGBT a critical component in modern engineering.
Technical Excellence in a Compact Package
At the heart of the IRGP4066D-EPBF lies its advanced trench gate structure, which optimizes electrical conductivity while minimizing losses. With a maximum collector-emitter breakdown voltage of 600V and a continuous collector current capacity of 140A, this transistor is engineered for high-stress environments. Its pulsed current capability extends to 225A, providing crucial headroom for transient load scenarios commonly encountered in industrial and automotive systems.
The device's saturation voltage (Vce(on)) remains impressively low at 2.1V under standard operating conditions (15V Vge, 75A Ic), directly translating to reduced conduction losses and improved thermal efficiency. This characteristic proves particularly valuable in applications like motor drives and renewable energy systems where efficiency optimization is paramount.
Parameter | Value |
---|---|
Max Voltage | 600V |
Continuous Current | 140A |
Switching Energy | 2.47mJ (on), 2.16mJ (off) |
Operating Temperature | -55°C to 175°C |
Beyond Specifications: Real-World Performance
Beyond its headline specifications, the IRGP4066D-EPBF demonstrates exceptional dynamic performance. Its gate charge (Qg) of 150nC enables rapid switching transitions, while the turn-on/turn-off delay times (50ns/200ns @ 25°C) ensure precise control in high-frequency applications. The reverse recovery time (trr) of 155ns further enhances switching efficiency when paired with complementary diodes, making it particularly suitable for hard-switching topologies.
Engineered with a TO-247AD package, this IGBT offers optimal thermal dissipation characteristics. The through-hole mounting configuration ensures mechanical stability in vibration-prone environments, while the industry-standard footprint facilitates seamless integration into existing designs. The device's operating temperature range (-55°C to 175°C) makes it resilient in extreme conditions, from industrial ovens to outdoor power infrastructure.
Applications Across Industries
The versatility of the IRGP4066D-EPBF makes it indispensable across multiple sectors. In industrial automation, it powers high-performance motor drives with its 454W maximum power rating. The renewable energy sector benefits from its capabilities in solar inverters and energy storage systems. Automotive applications leverage its robustness in EV charging infrastructure and onboard power conversion systems. Even in demanding white goods applications, its combination of efficiency and reliability enhances product longevity.
While listed as an obsolete part, its technical specifications continue to serve as a reference point for modern IGBT design. Engineers seeking alternatives will find that many contemporary devices maintain compatibility with this foundational technology, ensuring continued relevance in system upgrades and maintenance scenarios.
Optimizing System Design with IRGP4066D-EPBF
Designing with this IGBT requires careful consideration of its operating parameters. The test condition of 400V, 75A, 10Ω, and 15V gate drive provides crucial insight into real-world performance expectations. Implementing proper gate drive circuitry with adequate current sourcing/sinking capability ensures the device maintains its fast switching characteristics without introducing oscillations.
Thermal management remains critical - while the TO-247AD package facilitates efficient heat dissipation, proper heatsink selection and airflow planning are essential for maximizing device lifespan. The maximum operating temperature of 175°C serves as a design boundary, necessitating thermal protection circuitry in high-stress applications.
Tags: IRGP4066D-EPBF IGBT, Trench Technology, Infineon Components, Industrial Power Solutions, TO-247AD Device