STY139N65M5 N-Channel MOSFET 650V 130A MDmesh™ V Series
- Brand: STMicroelectronics
- Product Code: STY139N65M5
- Availability: In Stock
$9.80
- Ex Tax: $9.80
Revolutionizing Power Management with STY139N65M5 N-Channel MOSFET
STMicroelectronics' STY139N65M5 N-Channel MOSFET represents the pinnacle of power semiconductor technology in the MDmesh™ V series. Designed for high-efficiency power conversion systems, this 650V 130A transistor combines cutting-edge silicon innovation with robust packaging to deliver exceptional performance across industrial, automotive, and consumer applications. The MAX247™ package format and TO-247-3 through-hole mounting configuration ensure reliable thermal management while maintaining compact form factors for modern electronic designs.
Advanced Technical Specifications
Engineered for demanding environments, the STY139N65M5 features a groundbreaking combination of electrical characteristics:
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 130A @25°C |
| RDS(ON) Max | 17mΩ @65A, 10V |
| Gate Charge | 363 nC @10V |
| Operating Temperature | 150°C TJ |
Performance-Driven Design Philosophy
This power MOSFET leverages ST's proprietary MDmesh V technology to minimize conduction losses while maintaining exceptional switching performance. The device's ±25V gate voltage tolerance provides enhanced operational flexibility, while the 5V gate threshold voltage ensures compatibility with standard driver circuits. With 15600 pF input capacitance at 100V VDS, designers can optimize switching speeds without compromising reliability.
The Through Hole mounting configuration combined with MAX247 package enables efficient heat dissipation in high-power applications. This makes the STY139N65M5 ideal for demanding environments where thermal stability is critical, such as motor drives, power supplies, and renewable energy systems.
Industrial Applications and System Advantages
Engineers across multiple sectors are increasingly adopting this device for its exceptional power density capabilities:
- Industrial motor drives requiring high-current switching
- Renewable energy systems needing efficient DC-AC conversion
- Automotive electronics demanding robust power management
- High-efficiency SMPS designs for industrial equipment
- Motor control applications requiring precise current handling
The device's 625W power dissipation rating (at TC) enables operation in extreme thermal conditions, while its 250µA gate threshold current specification ensures precise control in power-sensitive applications. The 10V drive voltage optimization strikes the perfect balance between switching speed and conduction losses for modern power electronics.
Comparative Advantages in Power Electronics
When compared to conventional MOSFET technologies, the STY139N65M5 demonstrates significant performance improvements:
- 30% lower on-state resistance vs previous generation devices
- Enhanced thermal cycling capability through advanced packaging
- Superior avalanche energy ratings for improved reliability
- Reduced switching losses through optimized capacitance profiles
- Higher current handling in standard TO-247 footprint
This combination of electrical and mechanical characteristics positions the STY139N65M5 as the preferred choice for engineers developing next-generation power systems that demand both performance and reliability.
Tags: Power Management, Industrial Automation, Motor Control, Power Supply Design, Automotive Electronics