STWA88N65M5 N-Channel MOSFET 650V 84A TO-247

STWA88N65M5 N-Channel MOSFET 650V 84A TO-247

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High-Performance STWA88N65M5 N-Channel MOSFET for Demanding Power Applications

Engineered for excellence in high-voltage power systems, the STWA88N65M5 N-Channel MOSFET from STMicroelectronics represents the cutting edge of power transistor technology. This advanced component combines robust electrical characteristics with innovative MDmesh™ V technology, delivering exceptional efficiency and reliability for industrial and automotive applications where performance under pressure is paramount.

Technical Excellence in Power Management

Built to handle extreme operating conditions, this power MOSFET features a 650V drain-source voltage rating paired with an impressive 84A continuous drain current capacity. Its optimized Rds(on) of just 29mΩ at 10V gate drive ensures minimal conduction losses, translating to significant energy savings in switching applications. The device's advanced thermal design supports a maximum power dissipation of 450W, making it ideal for high-power density systems requiring superior thermal management.

ParameterValue
Max Voltage (Vdss)650V
Max Current (Id)84A
Rds(on) Max29mΩ
Gate Charge204nC
Advanced Design for Modern Electronics

The STWA88N65M5 incorporates STMicroelectronics' proprietary MDmesh™ V technology, which dramatically reduces conduction losses while maintaining exceptional switching performance. This innovation enables designers to create more efficient power supplies, motor drives, and renewable energy systems with reduced component count and improved thermal performance. The device's ±25V gate voltage rating provides enhanced operational flexibility, while its 150°C maximum operating temperature ensures reliable performance in demanding environments.

Industrial and Automotive Versatility

This high-performance transistor shines in applications requiring robust power handling capabilities. From industrial motor drives and solar inverters to automotive charging systems and energy storage solutions, the STWA88N65M5 delivers consistent performance across diverse operating conditions. The TO-247-3 package provides excellent thermal dissipation characteristics, making it particularly suitable for applications requiring efficient heat management in compact form factors.

Reliability-Driven Architecture

With its 5V gate threshold voltage and 8825pF input capacitance, this MOSFET balances fast switching capabilities with ease of drive requirements. The device's rugged construction and advanced packaging ensure long-term reliability in harsh operating environments. Its through-hole mounting configuration provides mechanical stability in vibration-prone applications, while the tube packaging ensures safe handling and storage prior to assembly.

Future-Proof Power Solutions

As industries continue to demand higher efficiency and smaller form factors in power electronics, components like the STWA88N65M5 represent the next generation of semiconductor solutions. Its combination of high voltage capability, low on-resistance, and advanced thermal management addresses key challenges in modern power system design. Whether developing next-generation EV charging stations, industrial automation equipment, or renewable energy systems, this MOSFET provides the performance headroom needed for demanding applications.

Tags: Power Transistor, High Voltage, Industrial Electronics, Automotive Components, MOSFET Technology

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