STMicroelectronics STW9NK95Z N-Channel MOSFET 950V 7A TO-247
- Brand: STMicroelectronics
- Product Code: STW9NK95Z
- Availability: In Stock
$0.64
- Ex Tax: $0.64
High-Performance STW9NK95Z N-Channel MOSFET for Demanding Power Applications
STMicroelectronics continues to set industry benchmarks with its STW9NK95Z N-Channel MOSFET, a high-voltage solution engineered for industrial power systems requiring exceptional reliability and efficiency. This 950V, 7A TO-247 packaged transistor combines advanced SuperMESH™ technology with robust thermal management capabilities, making it ideal for power supplies, motor drives, and energy-efficient converters. In this comprehensive overview, we explore the technical specifications, performance advantages, and application scenarios that position this device as a critical component for modern power electronics.
Technical Specifications and Performance Metrics
At the core of the STW9NK95Z's capabilities is its 950V drain-source voltage rating, which enables operation in high-voltage environments while maintaining stability under thermal stress. The device's N-channel MOSFET architecture delivers 1.38Ω on-resistance at 3.6A and 10V gate-source voltage, minimizing conduction losses in switching applications. Its ±30V gate voltage tolerance provides design flexibility, while the 4.5V gate threshold voltage ensures compatibility with standard logic controllers.
Parameter | Value |
---|---|
Max Drain-Source Voltage (Vdss) | 950 V |
Continuous Drain Current | 7A @ 25°C |
Rds(on) Max | 1.38Ω @ 10V Vgs |
Gate Charge | 56 nC @ 10V |
Operating Temperature | -55°C to 150°C |
The device's 2256 pF input capacitance and 56 nC gate charge characteristics optimize switching performance, reducing energy losses in high-frequency operations. Its TO-247-3 package provides excellent thermal dissipation, supporting 160W power dissipation under standard mounting conditions.
SuperMESH™ Technology Advantages
STMicroelectronics' proprietary SuperMESH™ technology forms the foundation of the STW9NK95Z's superior performance. This innovative approach to MOSFET design achieves an optimal balance between on-resistance and capacitance parameters, enabling:
- Enhanced switching efficiency in hard-switched and resonant topologies
- Reduced electromagnetic interference (EMI) through controlled switching transitions
- Improved avalanche energy ratings for robustness in inductive load applications
Engineers benefit from the device's predictable behavior across temperature ranges, with minimal parameter variation between -55°C and 150°C operating conditions.
Application Versatility
The STW9NK95Z's combination of voltage rating and current capacity makes it particularly suited for:
Industrial Power Supplies: High-voltage DC-DC converters and uninterruptible power supply (UPS) systems leverage its 950V rating for enhanced safety margins.
Motion Control Systems: Motor drives in automation equipment utilize its 7A continuous current capability for precise torque control.
Renewable Energy Systems: Solar inverters and energy storage systems benefit from its low conduction losses and thermal stability.
Home Appliances: Induction cookers and high-power domestic equipment exploit its robustness in repetitive switching environments.
Design Considerations and Implementation
When integrating the STW9NK95Z into circuit designs, engineers should consider:
- Thermal management: The TO-247 package requires adequate heatsinking for power dissipation above 50W
- Gate drive circuitry: Implementing proper snubber networks to protect against voltage spikes
- PCB layout: Minimizing parasitic inductance in high-current paths
- Derating: Applying appropriate current reduction curves at elevated temperatures
The device's ±30V gate voltage tolerance allows compatibility with various driver ICs, while its 100µA gate threshold current simplifies biasing requirements.
Quality and Reliability
As part of STMicroelectronics' industrial-grade component portfolio, the STW9NK95Z undergoes rigorous testing to meet:
- JEDEC qualification standards
- AEC-Q101 automotive stress requirements
- 100% avalanche testing in production
- RoHS and REACH compliance
This ensures consistent performance in harsh environments characterized by vibration, humidity, and temperature extremes.
Conclusion: A Benchmark in High-Voltage MOSFETs
The STW9NK95Z represents STMicroelectronics' commitment to advancing power transistor technology. Its combination of high-voltage capability, low on-resistance, and robust packaging makes it a versatile solution for engineers developing next-generation power systems. Whether designing industrial motor drives, renewable energy inverters, or high-efficiency power supplies, this N-channel MOSFET provides the performance characteristics needed to meet modern energy efficiency standards while maintaining design simplicity and cost-effectiveness.
Tags: Power MOSFET, Industrial Electronics, STM Components, High Voltage Transistors, TO-247 Devices