STW9NK90Z N-Channel MOSFET 900V 8A TO-247-3

STW9NK90Z N-Channel MOSFET 900V 8A TO-247-3

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High-Performance Power Management with STW9NK90Z N-Channel MOSFET

In the rapidly evolving world of power electronics, STMicroelectronics continues to set benchmarks with its SuperMESH™ technology. The STW9NK90Z N-Channel MOSFET exemplifies this innovation, offering engineers a robust solution for demanding applications requiring high voltage tolerance and efficient thermal management. This device combines advanced silicon design with a TO-247-3 package, delivering exceptional performance in industrial motor drives, renewable energy systems, and high-frequency power supplies.

Technical Excellence in Power Handling

Engineered for extreme operating conditions, this 900V power transistor maintains stability across temperature ranges from -55°C to 150°C. Its 1.3Ω RDS(ON) at 10V gate drive ensures minimal conduction losses, while the 72nC gate charge enables fast switching transitions. The device's ±30V gate voltage rating provides enhanced reliability in high-noise environments, making it ideal for applications like solar inverters and industrial automation equipment.

Key performance characteristics include:

ParameterValue
Continuous Drain Current8A @25°C
Input Capacitance2115pF @25V
Power Dissipation160W (Tc)
Applications and Design Flexibility

The STW9NK90Z's combination of high breakdown voltage and low on-resistance makes it particularly suitable for:

• High-voltage DC-DC converters in electric vehicle charging stations
• Motor control systems requiring precise power regulation
• Industrial SMPS (Switched-Mode Power Supplies) operating at elevated temperatures
• Renewable energy systems needing reliable power conversion

With its through-hole mounting configuration and TO-247-3 packaging, this MOSFET offers excellent thermal dissipation capabilities. Designers can optimize PCB layouts while maintaining mechanical stability, crucial for applications in harsh industrial environments.

Comparative Advantages

When compared to conventional high-voltage MOSFETs, the STW9NK90Z demonstrates superior performance metrics. Its 4.5V VGS(th) threshold ensures stable operation across varying temperature ranges, while the 900V VDSS rating provides safety margins in voltage-spike-prone applications. The device's 2115pF input capacitance at 25V enables efficient parallel operation, allowing designers to scale power handling capabilities without compromising switching performance.

Tags: Power Electronics, Industrial Components, High Voltage Devices, Power Management, Semiconductors

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