STW65N80K5 N-Channel MOSFET 800V 46A TO-247

STW65N80K5 N-Channel MOSFET 800V 46A TO-247

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Revolutionizing Power Management with STW65N80K5 MDmesh™ K5 Series MOSFET

STMicroelectronics continues to push the boundaries of power semiconductor technology with its STW65N80K5 MOSFET, a high-performance N-Channel transistor designed for demanding industrial and power conversion applications. Part of the renowned MDmesh™ K5 family, this device combines cutting-edge silicon expertise with optimized packaging to deliver exceptional efficiency, reliability, and thermal performance in a compact TO-247-3 footprint.

Engineered for modern power systems requiring both high voltage capabilities and minimal conduction losses, the STW65N80K5 operates at an impressive 800V drain-source voltage rating while maintaining a remarkably low on-resistance of just 80mΩ. This unique combination enables designers to create compact, energy-efficient solutions for applications ranging from switched-mode power supplies (SMPS) to motor control systems and industrial automation equipment.

Technical Excellence in Power Semiconductor Design

At the heart of this MOSFET lies STMicroelectronics' fifth-generation MDmesh™ technology, which employs advanced charge compensation techniques to dramatically reduce conduction losses without compromising breakdown voltage characteristics. The device's 46A continuous drain current capability at 25°C, coupled with a 10V gate drive voltage optimization, ensures minimal switching losses in high-frequency power conversion circuits.

ParameterValue
Drain-Source Voltage (Vdss)800 V
On-Resistance (Rds(on))80 mΩ
Gate Charge (Qg)92 nC
Operating Temperature-55°C to 150°C
Power Dissipation446W
Thermal Performance and Reliability

The STW65N80K5's thermal design excellence shines through its through-hole TO-247 package, which facilitates efficient heat dissipation even under full load conditions. With a ±30V gate-source voltage tolerance and 5V threshold voltage at 100μA, this MOSFET maintains stable operation across diverse environmental conditions. Its 3230pF input capacitance at 100V Vds ensures compatibility with standard gate drivers while minimizing switching losses.

Manufacturers benefit from the device's inherent robustness, featuring advanced avalanche energy specifications and short-circuit withstand capability. The MOSFET's rugged construction maintains performance integrity even in harsh industrial environments with temperature extremes and voltage transients.

Applications and System Optimization

This versatile power transistor excels in a wide range of applications including:

  • High-efficiency server and telecom power supplies
  • Industrial motor drives and variable frequency drives
  • Photovoltaic inverters and energy storage systems
  • Welding equipment and plasma cutting devices
  • Uninterruptible power supply (UPS) systems

Designers can leverage the STW65N80K5's superior performance to reduce heatsink requirements, increase switching frequencies, and improve overall system efficiency. When compared to conventional MOSFETs in similar voltage classes, this device demonstrates a 25% reduction in conduction losses and 15% improvement in thermal resistance.

Quality and Manufacturing Advantage

Backed by STMicroelectronics' decades of semiconductor manufacturing expertise, each STW65N80K5 undergoes rigorous quality testing to ensure long-term reliability. The device meets stringent industrial standards for moisture sensitivity (MSL1) and incorporates RoHS-compliant materials, making it suitable for both leaded and lead-free manufacturing processes.

With thousands of units in stock and a proven track record in global industrial applications, this MOSFET represents the perfect balance between cutting-edge technology and field-proven reliability. Its tube packaging format simplifies handling and integration into automated assembly lines, while the active product status guarantees long-term supply stability.

Tags: Power Electronics, Industrial Components, Semiconductor Devices, Electrical Engineering, Circuit Design

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