STW56N60M2 N-Channel MOSFET 600V 52A TO-247-3
- Brand: STMicroelectronics
- Product Code: STW56N60M2
- Availability: In Stock
$1.48
- Ex Tax: $1.48
High-Performance STW56N60M2 N-Channel MOSFET for Demanding Power Applications
The STW56N60M2 from STMicroelectronics represents a cutting-edge solution for engineers seeking reliable power management components in industrial and high-voltage systems. As part of the MDmesh™ M2 series, this N-Channel MOSFET combines advanced silicon technology with robust packaging to deliver exceptional performance across a wide range of applications. Its TO-247-3 through-hole package ensures excellent thermal management while maintaining compatibility with traditional PCB designs.
Key Technical Advantages
Operating at 600V with a continuous drain current of 52A, this device demonstrates STMicroelectronics' commitment to power electronics innovation. The optimized RDS(on) of 55mΩ at 10V gate drive enables efficient power delivery while minimizing thermal stress. With a maximum power dissipation rating of 350W at case temperature, the STW56N60M2 maintains stability even under sustained high-load conditions. The ±25V gate voltage tolerance provides additional design flexibility while ensuring reliable operation in switching applications.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 52A @ 25°C |
| RDS(on) | 55mΩ @ 26A, 10V |
| Gate Charge | 91nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Engineering Excellence in Power Discrete Design
Beyond its impressive specifications, the STW56N60M2 incorporates features that address real-world engineering challenges. The device's 3750pF input capacitance at 100V VDS optimizes switching performance in high-frequency applications. Its 4V gate threshold voltage at 250µA ensures clean transitions while maintaining compatibility with standard driver circuits. The through-hole mounting configuration provides mechanical stability and superior heat dissipation compared to surface-mount alternatives.
As part of STMicroelectronics' MDmesh™ M2 family, this MOSFET benefits from advanced superjunction technology that reduces conduction losses while maintaining avalanche ruggedness. The device's design enables efficient parallel operation for high-current applications, with consistent parameter matching across units. This makes it particularly suitable for power supplies, motor drives, and industrial automation systems requiring reliable performance over extended operating cycles.
Comprehensive Thermal Management
The TO-247-3 package's thermal characteristics deserve special attention in system design. The device's ability to dissipate 350W at case temperature allows operation in demanding environments without complex heatsinking solutions. When combined with its 150°C maximum operating junction temperature, this thermal capability provides designers with a safety margin for applications experiencing transient overloads or elevated ambient temperatures.
Applications and System Integration
This versatile N-Channel MOSFET finds application in various power electronics systems including: industrial motor drives, renewable energy inverters, high-voltage DC-DC converters, and welding equipment. Its combination of high voltage rating and substantial current capability makes it particularly suitable for applications requiring efficient power switching in compact form factors. The device's packaging allows straightforward integration with traditional heatsinking methods while maintaining electrical isolation requirements.
Tags: Power Electronics, Industrial Semiconductor, High Voltage MOSFET, Through Hole Package, STMicroelectronics Components