STMicroelectronics STW48NM60N MOSFET N-Channel 600V 44A TO247
- Brand: STMicroelectronics
- Product Code: STW48NM60N
- Availability: In Stock
$1.40
- Ex Tax: $1.40
High-Performance STW48NM60N MOSFET for Industrial Applications
STMicroelectronics' STW48NM60N MOSFET represents the cutting-edge MDmesh™ II technology, delivering exceptional power efficiency and reliability for demanding industrial applications. This N-Channel power transistor combines advanced silicon design with robust TO-247 packaging, making it ideal for high-voltage switching systems requiring superior thermal management and minimal conduction losses.
Technical Excellence in Power Management
Engineered for precision performance, the STW48NM60N features a 600V drain-source voltage rating paired with a 44A continuous drain current capacity. Its optimized Rds(on) of 70mΩ at 20A/10V gate drive ensures minimal power dissipation while maintaining exceptional switching speed. The device's 124nC gate charge specification enables rapid transitions, reducing switching losses in high-frequency operations commonly found in modern power conversion systems.
Parameter | Value |
---|---|
Max Voltage | 600V |
Continuous Current | 44A |
Rds(on) Max | 70mΩ |
Power Dissipation | 330W |
Advanced Thermal Architecture
The TO-247-3 package design incorporates a thermally enhanced footprint that facilitates efficient heat transfer in high-power environments. With operating temperatures reaching 150°C (TJ) and ±25V gate voltage tolerance, this MOSFET maintains stability under extreme conditions. The 4285pF input capacitance at 50V Vds enables controlled switching dynamics while minimizing electromagnetic interference (EMI) in industrial motor drives and power supplies.
Engineers will appreciate the device's 4V gate threshold voltage (at 250µA) that ensures reliable turn-on characteristics across varying load conditions. The combination of 330W power dissipation capability and 10V drive compatibility makes this transistor particularly suitable for switched-mode power supplies (SMPS), solar inverters, and industrial automation equipment.
Design Versatility and System Integration
As part of STMicroelectronics' MDmesh™ II series, the STW48NM60N offers exceptional design flexibility through its tube packaging format and active product status. The device's through-hole mounting configuration provides mechanical stability in vibration-prone environments while maintaining excellent thermal coupling with heatsinks. Its 250µA gate threshold specification ensures compatibility with standard driver circuits while maintaining low leakage current characteristics.
With 55,800 units in stock and available in tube packaging, this component offers both technical performance and supply chain reliability. The device's 10V gate drive optimization ensures seamless integration with common PWM controllers while maintaining minimal switching losses across various operating conditions.
Tags: Power Transistors, High Voltage MOSFET, Industrial Electronics, Semiconductor Devices, TO-247 Package