STMicroelectronics STW38N65M5 MOSFET N-Channel 650V 30A TO-247

Revolutionizing Power Management with STMicroelectronics STW38N65M5 MOSFET

In the ever-evolving landscape of power electronics, STMicroelectronics continues to set industry benchmarks with its innovative MDmesh™ V series. The STW38N65M5 MOSFET emerges as a game-changer for engineers seeking exceptional performance in high-voltage applications. This N-Channel power transistor combines cutting-edge silicon technology with robust packaging to deliver unparalleled efficiency and reliability in demanding environments.

Advanced Silicon Technology

At the heart of the STW38N65M5 lies STMicroelectronics' fifth-generation MDmesh™ V technology, a breakthrough in super-junction MOSFET design. This advanced architecture enables remarkable 650V blocking capability while maintaining ultra-low on-resistance of just 95mΩ at 15A. The device's optimized charge balance structure minimizes conduction losses, making it ideal for high-frequency switching applications where thermal management is critical.

The transistor's 30A continuous drain current rating at 25°C, combined with its ±25V gate voltage tolerance, provides exceptional design flexibility. Engineers can push performance boundaries while maintaining safe operating margins, even in harsh industrial environments. The device's 150°C maximum operating temperature ensures reliable operation in high-heat scenarios, from renewable energy systems to industrial motor drives.

Optimized for Real-World Performance

With 71nC gate charge at 10V drive voltage, the STW38N65M5 achieves a perfect balance between switching speed and control. This characteristic makes it particularly well-suited for applications requiring rapid transitions without compromising stability. The 3000pF input capacitance at 100V further enhances its suitability for high-frequency circuits, enabling designers to minimize switching losses while maintaining excellent thermal performance.

Industrial-Grade Reliability

Housed in the industry-standard TO-247-3 package, this MOSFET combines proven mechanical durability with superior thermal dissipation. The through-hole mounting configuration ensures robust physical connections, while the package's inherent heat-spreading capabilities support the device's 190W maximum power dissipation rating. This combination makes the STW38N65M5 an excellent choice for mission-critical applications where failure is not an option.

From power supplies and converters to motor control systems and renewable energy inverters, this device demonstrates remarkable versatility. Its exceptional performance characteristics enable engineers to design more efficient systems with reduced component counts, lowering overall costs while improving reliability. The device's active status in STMicroelectronics' product portfolio ensures long-term availability, providing peace of mind for extended production runs.

Design Flexibility and Future-Proofing

The STW38N65M5's comprehensive feature set makes it particularly attractive for next-generation power designs. Its compatibility with standard gate drivers simplifies implementation, while its robust specifications allow for easy derating in demanding applications. Designers will appreciate the device's inherent stability across temperature ranges, with minimal parameter variation from 25°C to its maximum 150°C operating temperature.

As industries continue their march toward greater energy efficiency, the STW38N65M5 stands ready to enable innovative solutions. Whether you're designing cutting-edge EV charging systems, industrial automation equipment, or high-efficiency power supplies, this MOSFET provides the perfect blend of performance, reliability, and design flexibility. With STMicroelectronics' renowned quality backing its specifications, engineers can confidently deploy this device in applications where performance and longevity are paramount.

Tags: Power Electronics, Semiconductor Devices, Voltage Regulators, Industrial Components, Energy Efficiency