STW36NM60ND N-Channel MOSFET 600V 29A TO-247

STW36NM60ND: High-Performance Power MOSFET for Automotive Applications

STMicroelectronics continues to redefine power management standards with its STW36NM60ND N-Channel MOSFET - a cutting-edge solution engineered for demanding automotive and industrial applications. This advanced power transistor combines exceptional electrical performance with robust thermal characteristics, making it ideal for modern power conversion systems requiring reliability and efficiency in compact designs.

Technical Excellence in Power Semiconductor Design

At the core of the STW36NM60ND's performance is its innovative FDmesh™ II technology. This proprietary design approach optimizes the trade-off between conduction and switching losses, delivering superior efficiency across various operating conditions. The device's 600V breakdown voltage rating enables its use in high-voltage applications while maintaining exceptional stability under thermal stress.

With a continuous drain current capacity of 29A at 25°C, this TO-247 packaged MOSFET offers exceptional current handling capabilities. Its 110mΩ maximum on-resistance at 14.5A and 10V gate-source voltage ensures minimal power loss during operation, translating to improved system efficiency and reduced thermal management requirements.

Thermal and Mechanical Advantages

The STW36NM60ND's through-hole TO-247-3 package provides excellent thermal dissipation characteristics, with a maximum power dissipation rating of 190W at case temperature. This thermal performance enables designers to create compact power systems without compromising reliability, even under continuous high-load conditions.

Operating temperature specifications reaching 150°C junction temperature ensure the device's suitability for automotive environments where elevated temperatures are common. The ±25V gate-source voltage rating provides additional design flexibility while maintaining robustness against voltage transients.

Automotive-Grade Reliability

Engineered to meet stringent automotive requirements, the STW36NM60ND carries AEC-Q101 qualification - the industry standard for automotive semiconductor reliability. This certification guarantees the device's performance in harsh vehicle environments characterized by vibration, temperature extremes, and electrical noise.

The MOSFET's FDmesh™ II technology specifically addresses automotive application challenges through optimized switching characteristics. This results in reduced electromagnetic interference (EMI) generation, improved system efficiency, and enhanced overall vehicle electrical system performance.

Design Flexibility and Application Versatility

While specifically designed for automotive applications, the STW36NM60ND's capabilities extend to various power electronics domains. Its combination of high voltage rating, current capacity, and efficient switching characteristics makes it suitable for:

• Electric vehicle power systems
• Industrial motor drives
• Renewable energy inverters
• High-frequency power supplies
• Automotive lighting systems

The device's 2785pF input capacitance and 80.4nC gate charge specifications enable high-frequency operation while maintaining manageable drive requirements. This makes it particularly suitable for modern switching power supplies and motor control applications where efficiency and switching speed are critical parameters.

Advanced Packaging and Manufacturing

STMicroelectronics' commitment to quality is evident in the STW36NM60ND's TO-247 packaging. This industry-standard through-hole package provides excellent mechanical stability and thermal performance while ensuring compatibility with established manufacturing processes.

The device's tube packaging format simplifies handling and integration into automated assembly lines, maintaining component integrity during the manufacturing process. This packaging approach also facilitates proper device orientation and handling during manual assembly operations.

Conclusion: Setting New Standards in Power Management

The STW36NM60ND represents a significant advancement in power MOSFET technology, combining automotive-grade reliability with exceptional electrical performance. Its FDmesh™ II technology platform delivers optimized efficiency across operating conditions, making it an ideal choice for engineers developing next-generation power systems.

Whether implementing advanced motor control solutions, designing high-efficiency power supplies, or developing automotive electronics systems, the STW36NM60ND provides the performance characteristics and reliability required to meet modern engineering challenges. As part of STMicroelectronics' comprehensive power management portfolio, this device offers designers a proven solution for creating innovative, high-performance power electronics applications.

Tags: Power Electronics, Automotive Components, MOSFET Technology, Industrial Semiconductors, Electrical Engineering