STW34NM60N N-Channel MOSFET 600V 29A TO-247-3
- Brand: STMicroelectronics
- Product Code: STW34NM60N
- Availability: In Stock
$2.00
- Ex Tax: $2.00
The STW34NM60N is a high-performance N-Channel Power MOSFET from STMicroelectronics, engineered to deliver exceptional efficiency and reliability in demanding power management applications. This advanced transistor combines robust technical specifications with the proven durability of STMicroelectronics' MDmesh™ II technology, making it an ideal solution for industrial, automotive, and high-voltage systems. With a 600V rating, 29A continuous drain current capability, and a compact TO-247-3 package, this device offers a perfect balance between power handling and space-saving design.
Technical Excellence in Power Semiconductor Design
At the heart of the STW34NM60N lies STMicroelectronics' innovative MDmesh™ II technology, which significantly reduces on-resistance and gate charge while maintaining exceptional thermal performance. This translates to 105mΩ typical RDS(on) at 14.5A and 10V gate-source voltage, ensuring minimal power losses during operation. The device's 600V breakdown voltage specification makes it particularly suitable for applications requiring high voltage tolerance, while its ±25V gate voltage rating provides enhanced design flexibility.
Engineers will appreciate the device's 80nC gate charge characteristic, which enables fast switching performance while maintaining compatibility with standard gate drivers. The 2722pF input capacitance at 100V VDS further contributes to its high-frequency operation capabilities, making it well-suited for modern power conversion systems where efficiency and speed are critical.
Key Performance Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 600V |
| Continuous Drain Current (ID) | 29A @ 25°C |
| On-Resistance (RDS(on)) | 105mΩ @ 14.5A, 10V |
| Gate Charge (Qg) | 80nC @ 10V |
| Operating Temperature | 150°C (TJ) |
These specifications make the STW34NM60N particularly well-suited for applications requiring high efficiency at elevated temperatures. The through-hole TO-247-3 package ensures reliable mechanical mounting while providing excellent thermal dissipation capabilities, with a maximum power dissipation of 250W at case temperature.
Industrial and Automotive Applications
The STW34NM60N's robust design and comprehensive specification make it an excellent choice for a wide range of power electronics applications. In industrial settings, it excels in motor drives, power supplies, and welding equipment where its high current capability and thermal stability ensure consistent performance. Automotive engineers will find it particularly valuable for electric vehicle charging systems, battery management circuits, and high-intensity discharge (HID) lighting systems.
Its 4V gate threshold voltage (at 250μA) ensures compatibility with standard logic level drivers while maintaining noise immunity, making it suitable for both traditional and modern control architectures. The device's inherent ruggedness against voltage spikes and thermal stress makes it particularly suitable for harsh operating environments.
Design Considerations and Implementation
When implementing the STW34NM60N in power designs, engineers should consider several key factors to maximize performance. The device's TO-247-3 packaging allows for easy heatsinking through the drain tab, which should be properly mounted to an appropriate heatsink for optimal thermal management. Designers should ensure gate drive circuits can source/sink sufficient current to charge/discharge the 80nC gate charge quickly while maintaining voltage within the ±25V absolute maximum rating.
For parallel operation configurations, careful attention should be paid to PCB layout symmetry to ensure balanced current sharing between devices. The device's inherent thermal stability and low on-resistance drift over temperature make it particularly well-suited for paralleling applications where higher current capabilities are required.
Comparative Advantage
Compared to similar devices in its class, the STW34NM60N offers several distinct advantages. Its combination of low on-resistance, high current capability, and industry-leading packaging technology provides a superior performance-per-watt ratio. The MDmesh™ II technology enables significantly lower switching losses compared to conventional power MOSFETs, resulting in improved overall system efficiency and reduced thermal management requirements.
STMicroelectronics' commitment to quality and reliability is evident in the STW34NM60N's design. The device meets rigorous industry standards and is manufactured under the company's stringent quality control processes, ensuring consistent performance across production batches and extended operational life even under demanding conditions.
Tags: STW34NM60N, N-Channel MOSFET, 600V Transistor, TO-247-3, Power Electronics