STW24N60DM2 N-Channel MOSFET | 600V 18A Power Transistor | TO-247

STW24N60DM2: High-Performance Power MOSFET for Demanding Applications

Engineered for excellence in high-voltage power conversion systems, the STW24N60DM2 from STMicroelectronics represents the cutting edge of FDmesh™ II Plus technology. This N-channel MOSFET combines industry-leading specifications with robust thermal management capabilities, making it ideal for modern power electronics applications where efficiency and reliability are paramount.

Advanced Technical Specifications

At the heart of this device's performance lies its 600V breakdown voltage rating paired with an impressive 18A continuous drain current capacity. The 200mΩ maximum Rds(on) at 10V gate drive ensures minimal conduction losses, while the optimized gate charge of 29nC enables rapid switching transitions. With ±25V gate voltage tolerance and a 150W maximum power dissipation rating, this transistor demonstrates exceptional durability in challenging environments.

Key Performance Features

The STW24N60DM2's Through-Hole TO-247-3 package design offers superior thermal dissipation characteristics, with its 150W power dissipation rating allowing operation in extreme thermal conditions. The device's 5V gate threshold voltage ensures compatibility with standard logic drivers while maintaining optimal performance. Its 1055pF input capacitance at 100V Vds enables efficient high-frequency operation in switching applications.

Engineered for modern power systems, this MOSFET excels in applications requiring precise control of high currents and voltages. The device's FDmesh™ II Plus technology provides enhanced avalanche energy resistance, making it particularly suitable for industrial motor drives and power supply units where reliability is critical.

Industrial Applications

With its comprehensive feature set, this power transistor finds application across various demanding environments including:

• Switching Mode Power Supplies (SMPS)
• Motor control and drive systems
• Industrial automation equipment
• Renewable energy systems (solar inverters, wind turbines)
• Electric vehicle charging infrastructure

The device's 18A current rating combined with 600V capability makes it particularly well-suited for high-efficiency power conversion systems requiring minimal thermal management overhead. Its TO-247 package ensures easy integration into existing PCB designs while maintaining optimal thermal performance.

Reliability and Longevity

Designed for extended operational life, the STW24N60DM2 incorporates STMicroelectronics' advanced process technology that ensures stable performance across its entire operating temperature range (-55°C to 150°C). The device's robust construction and protective features, including its ±25V gate voltage tolerance, contribute to its exceptional reliability in demanding environments.

This power MOSFET undergoes rigorous quality testing to meet industry standards for industrial applications. Its construction and materials have been optimized to maintain consistent performance characteristics throughout its service life, even under continuous high-power operation.

Design Considerations

When implementing the STW24N60DM2 in circuit designs, engineers should consider several key factors to maximize performance:

The device's 10V drive voltage recommendation ensures optimal Rds(on) performance while maintaining efficient switching characteristics. Proper thermal management through appropriate heatsinking is essential to leverage its full 150W power dissipation capability. Designers should also account for the 29nC gate charge specification when selecting gate driver circuits to ensure optimal switching performance.

The transistor's 250µA gate threshold current at 5V Vgs allows for direct interfacing with standard logic circuits while maintaining noise immunity. For high-frequency applications, the device's 1055pF input capacitance should be considered in gate drive design to optimize switching efficiency.

Tags: Power Electronics, Semiconductor Devices, High Voltage MOSFET, Industrial Components, Electronic Circuitry