STW20N95K5 N-Channel MOSFET 950V 17.5A TO-247-3

STW20N95K5 N-Channel MOSFET 950V 17.5A TO-247-3

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STW20N95K5 N-Channel MOSFET: High-Performance Power Transistor for Demanding Applications

STMicroelectronics' STW20N95K5 N-Channel MOSFET represents the cutting-edge of power transistor technology, combining exceptional electrical performance with robust thermal management. Designed for high-voltage industrial applications, this SuperMESH5™ series component delivers reliable operation in power conversion systems requiring both efficiency and durability.

Advanced SuperMESH5™ Technology for Enhanced Efficiency

At the heart of this device lies STMicroelectronics' proprietary SuperMESH5™ technology, which optimizes the balance between conduction and switching losses. This innovation enables the STW20N95K5 to achieve a remarkable 330mΩ maximum Rds(on) at 9A/10V, significantly reducing power dissipation while maintaining high current handling capabilities. The advanced trench gate structure minimizes gate charge (40nC @ 10V), allowing faster switching transitions in power supply designs.

Engineered for high-voltage environments, this MOSFET features a 950V drain-source breakdown voltage rating that exceeds standard industrial requirements. The device's ±30V gate voltage tolerance provides design flexibility while maintaining reliable operation across varying thermal conditions. With a thermal resistance (RthJC) of just 0.5°C/W, the TO-247-3 package ensures efficient heat dissipation for high-power applications.

ParameterValue
Drain-Source Voltage (Vdss)950V
Continuous Drain Current (Id)17.5A @ 25°C
Rds(on) Max @ 9A/10V330mΩ
Gate Charge (Qg)40nC @ 10V
Operating Temperature-55°C to 150°C
Industrial-Grade Reliability in TO-247 Packaging

The STW20N95K5's TO-247-3 through-hole package combines mechanical stability with excellent thermal performance, making it ideal for industrial power supplies, motor control systems, and renewable energy inverters. Its 250W power dissipation rating (at case temperature) ensures stable operation even under continuous high-load conditions. The device's 100µA gate threshold voltage of 5V enables compatibility with standard logic-level gate drivers while maintaining low leakage current.

Key design advantages include its 1500pF input capacitance (at 100V) that optimizes high-frequency switching performance, and the built-in avalanche energy rating that enhances system reliability in inductive load applications. The device meets RoHS compliance standards while maintaining industrial temperature range operation from -55°C to 150°C.

Optimized for Modern Power Systems

Whether implementing in switch-mode power supplies, DC-DC converters, or industrial motor drives, the STW20N95K5 offers designers a compelling combination of high voltage capability, low on-resistance, and fast switching characteristics. Its advanced packaging technology ensures reliable soldering and long-term mechanical stability in harsh operating environments.

Tags: N-Channel MOSFET, Power Transistors, High Voltage MOSFET, TO-247 Package, Industrial Electronics

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