STMicroelectronics STW120NF10 N-Channel MOSFET - 100V 110A TO-247-3 Power Transistor
- Brand: STMicroelectronics
- Product Code: STW120NF10
- Availability: In Stock
$3.00
- Ex Tax: $3.00
High-Performance STW120NF10 N-Channel MOSFET for Demanding Power Applications
STMicroelectronics continues to push the boundaries of power semiconductor technology with its STW120NF10 N-Channel MOSFET. This advanced power transistor combines cutting-edge STripFET™ II technology with robust TO-247-3 packaging to deliver exceptional performance in demanding industrial and automotive applications. With its 100V voltage rating and 110A continuous drain current capability, this device represents the perfect balance between power handling capacity and thermal efficiency.
Technical Excellence in Power Transistor Design
The STW120NF10 stands out in the competitive landscape of power MOSFETs through its impressive specification set. Operating at 10V gate drive voltage, this device achieves an exceptionally low RDS(on) of just 10.5mΩ, significantly reducing conduction losses and improving overall system efficiency. Its optimized gate charge characteristic of 233nC at 10V ensures rapid switching performance while maintaining control over electromagnetic interference (EMI) generation.
Engineered for reliability in extreme environments, the STW120NF10 maintains operational stability across an impressive temperature range of -55°C to 175°C. This exceptional thermal performance is complemented by its 312W maximum power dissipation rating (at case temperature), making it particularly suitable for high-power density designs where thermal management poses significant challenges.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 100V |
| Continuous Drain Current (ID) | 110A @25°C |
| RDS(on) @10V VGS | 10.5mΩ |
| Gate Charge (Qg) | 233nC |
| Operating Temperature | -55°C to 175°C |
Application Versatility
This power transistor's combination of high current capability and efficient thermal management makes it an ideal choice for a wide range of applications. In industrial motor drives, its robustness ensures reliable operation in demanding environments while maintaining precise control over power delivery. The device's 100V rating makes it particularly well-suited for renewable energy systems like solar inverters and energy storage systems requiring high-voltage operation.
Automotive engineers will appreciate its performance in electric vehicle charging systems and onboard power management solutions. The TO-247-3 package provides excellent mechanical stability and thermal dissipation characteristics, essential for maintaining reliability in under-the-hood applications where vibration and temperature extremes are common.
Design Advantages
The STW120NF10's ±20V gate voltage rating provides designers with greater flexibility in gate drive circuit design, while its 4V maximum threshold voltage ensures compatibility with standard logic level control circuits. The device's 5200pF input capacitance at 25V VDS has been carefully optimized to maintain fast switching performance without compromising stability.
When compared to alternative solutions in the same power class, the STW120NF10 offers distinct advantages in terms of both performance and reliability. Its combination of low on-resistance, high current capability, and robust thermal characteristics makes it an excellent choice for next-generation power designs seeking to maximize efficiency while minimizing component count and system complexity.
Quality and Reliability
As part of STMicroelectronics' Active product status portfolio, the STW120NF10 benefits from the manufacturer's rigorous quality control processes and commitment to long-term supply continuity. This ensures that design engineers can confidently incorporate this device into their projects, knowing they're working with a component that meets the highest industry standards for reliability and performance.
Available in convenient tube packaging with a 600-piece inventory availability, the STW120NF10 offers both prototyping flexibility and volume production scalability. Its competitive pricing structure at $3.00 per unit (in quantities) makes it an attractive option for cost-sensitive applications without compromising on performance or reliability.
Tags: High-Voltage MOSFET, Industrial Power Components, TO-247 Package, Electronic Transistors, Semiconductor Devices