STW11NK100Z N-Channel MOSFET 1000V 8.3A TO-247-3

STW11NK100Z N-Channel MOSFET 1000V 8.3A TO-247-3

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Revolutionizing Power Management with STW11NK100Z N-Channel MOSFET

In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its cutting-edge SuperMESH™ technology. The STW11NK100Z N-Channel MOSFET exemplifies this innovation, offering unparalleled performance in high-voltage applications. Designed for demanding environments, this device combines robust electrical characteristics with superior thermal management, making it an ideal choice for industrial engineers seeking reliability and efficiency.

Technical Excellence in Power Discrete Components

At the heart of the STW11NK100Z lies its exceptional voltage handling capability, with a Drain-Source Voltage (Vdss) rating of 1000V. This high-voltage endurance enables its deployment in challenging applications such as power factor correction circuits, motor drives, and industrial power supplies. The device's continuous drain current of 8.3A at 25°C operating temperature ensures stable performance even under significant electrical stress.

Engineered with precision, this TO-247-3 packaged MOSFET features a remarkably low Rds(on) of 1.38Ω at 4.15A and 10V Vgs, minimizing conduction losses and enhancing system efficiency. Its gate charge characteristic of 162nC at 10V further contributes to faster switching capabilities, making it suitable for high-frequency applications where rapid transient response is critical.

Thermal Performance and Reliability

The STW11NK100Z's through-hole mounting design, coupled with its TO-247-3 package, facilitates efficient heat dissipation. With a maximum power dissipation rating of 230W at case temperature, this device maintains optimal thermal performance even in high-power scenarios. Its operating temperature range of -55°C to 150°C ensures reliability across extreme environmental conditions, while the ±30V gate-source voltage protection offers enhanced device safety.

The device's 3500pF input capacitance at 25V Vds strikes an ideal balance between switching performance and stability. This characteristic, combined with a 4.5V gate threshold voltage at 100µA, enables precise control in various power conversion topologies including flyback converters, forward converters, and resonant circuits.

Industrial Applications and Design Flexibility

As part of STMicroelectronics' renowned SuperMESH™ family, the STW11NK100Z delivers exceptional performance in hard-switching applications. Its design makes it particularly suitable for:

  • Industrial motor drives and variable frequency drives
  • High-voltage DC-DC converters
  • Uninterruptible power supply (UPS) systems
  • Plasma/LCD display power supplies
  • High-end consumer electronics
ParameterSpecification
Max Voltage1000V
Continuous Current8.3A
Rds(on) Max1.38Ω
Package TypeTO-247-3
Gate Charge162nC
Future-Proof Power Solutions

With its active product status and comprehensive safety certifications, the STW11NK100Z represents a forward-thinking solution for modern power electronics design. The device's robust construction and adherence to industry standards ensure compatibility with various circuit configurations, while its through-hole mounting design provides mechanical stability in vibration-prone environments.

As industries continue their digital transformation journey, components like the STW11NK100Z become increasingly vital. Its performance characteristics enable designers to create more compact power systems without compromising on reliability or efficiency, making it an essential component in the next generation of industrial automation and energy management solutions.

Tags: Power Electronics, MOSFET Transistors, Industrial Components, Voltage Regulation, Electronic Components

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