STW10NK60Z N-Channel MOSFET 600V 10A TO-247-3
- Brand: STMicroelectronics
- Product Code: STW10NK60Z
- Availability: In Stock
$0.96
- Ex Tax: $0.96
Revolutionizing Power Management with STW10NK60Z SuperMESH™ MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its SuperMESH™ technology series. The STW10NK60Z N-Channel MOSFET represents a perfect blend of cutting-edge semiconductor engineering and practical design optimization. This 600V, 10A power transistor delivers exceptional performance for demanding industrial applications while maintaining operational efficiency and thermal stability.
Technical Excellence in a Compact Package
Housed in a standard TO-247-3 through-hole package, the STW10NK60Z demonstrates remarkable electrical characteristics. Its advanced Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) architecture achieves a maximum RDS(on) of just 750mΩ at 4.5A and 10V gate-source voltage. This impressive on-state resistance translates to reduced conduction losses and improved system efficiency, particularly in high-frequency switching applications.
Key electrical parameters that define this device's superiority include:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 600V |
| Continuous Drain Current (ID) | 10A (Tc) |
| Gate Charge (Qg) | 70nC @ 10V |
| Input Capacitance (Ciss) | 1370pF @ 25V |
| Operating Temperature | -55°C to 150°C (TJ) |
The device's ±30V gate-source voltage protection ensures robustness against voltage spikes, while its 4.5V threshold voltage specification guarantees reliable operation across varying conditions. With a maximum power dissipation rating of 156W (Tc), this MOSFET can handle demanding power conversion requirements in industrial motor drives, power supplies, and battery management systems.
Design Advantages for Modern Applications
The STW10NK60Z leverages STMicroelectronics' proprietary SuperMESH™ technology to achieve an optimal balance between conduction and switching losses. This innovation enables engineers to design more compact power systems with improved thermal management characteristics. The device's through-hole mounting configuration provides enhanced mechanical stability, particularly in environments subject to vibration or thermal cycling.
Notable design benefits include:
- 70nC gate charge minimizing switching losses
- 1370pF input capacitance optimizing high-frequency performance
- ±30V gate voltage tolerance enhancing reliability
- 156W power dissipation capability supporting high-current applications
These characteristics make the STW10NK60Z particularly well-suited for modern power conversion systems requiring efficient operation across wide load ranges. Its thermal stability remains consistent even under demanding conditions, making it ideal for industrial automation equipment, renewable energy systems, and motor control applications.
Comprehensive Protection and Reliability
Beyond its electrical specifications, this MOSFET incorporates multiple protection features essential for industrial environments. The device maintains stable performance across the full industrial temperature range (-55°C to 150°C), ensuring reliable operation in harsh conditions. Its robust construction and electrical protection features combine to deliver extended operational life and reduced maintenance requirements.
Engineers will appreciate the device's compatibility with standard TO-247-3 socket designs, facilitating easy integration into existing systems. The 4.5V gate threshold voltage enables compatibility with standard logic level drivers while maintaining sufficient noise immunity for industrial applications.
Tags: Power Electronics, High Voltage MOSFET, Industrial Components, Semiconductor Devices, Electrical Engineering