STU7NM60N N-Channel MOSFET 600V 5A (IPAK Package)
- Brand: STMicroelectronics
- Product Code: STU7NM60N
- Availability: In Stock
$0.60
- Ex Tax: $0.60
Revolutionizing Power Management: STU7NM60N N-Channel MOSFET
In the ever-evolving landscape of semiconductor technology, STMicroelectronics continues to push boundaries with its MDmesh™ II series, featuring the STU7NM60N N-Channel MOSFET. This high-performance power transistor combines cutting-edge design with exceptional reliability, making it an ideal choice for demanding applications in industrial, automotive, and consumer electronics sectors.
Technical Excellence in Power Discrete Components
Engineered to deliver superior electrical characteristics, the STU7NM60N stands out with its impressive 600V drain-to-source voltage rating and 5A continuous drain current capacity. Housed in the industry-standard TO-251 (IPAK) package, this MOSFET offers a perfect balance between compact form factor and robust performance. The device's 900mΩ maximum Rds(on) at 2.5A and 10V gate-source voltage ensures minimal conduction losses, while its advanced silicon technology enables efficient thermal management even under heavy workloads.
Parameter | Value |
---|---|
Max Voltage (Vdss) | 600 V |
Continuous Current (Id) | 5A @ 25°C |
On-Resistance (Rds(on)) | 900mΩ @ 2.5A, 10V |
Gate Charge (Qg) | 14 nC @ 10 V |
Operating Temperature | 150°C (TJ) |
Advanced Features for Demanding Applications
Built with STMicroelectronics' proven MDmesh™ II technology, the STU7NM60N delivers exceptional avalanche energy ratings and improved switching performance. Its ±25V gate-source voltage tolerance provides enhanced design flexibility, while the 363 pF input capacitance at 50V ensures stable operation in high-frequency applications. The device's through-hole mounting configuration simplifies PCB design and assembly processes, making it particularly suitable for power supply and motor control applications.
Performance-Driven Design Philosophy
The STU7NM60N's optimized design reduces both conduction and switching losses, enabling higher system efficiency in power conversion circuits. Its 4V maximum gate threshold voltage at 250µA allows for seamless integration with standard logic circuits, while maintaining excellent thermal stability. The 45W maximum power dissipation rating (at case temperature) ensures reliable operation in demanding environments, making it a preferred choice for designers seeking to balance performance and reliability.
Comprehensive Protection and Reliability
As part of STMicroelectronics' automotive-qualified product line, this MOSFET incorporates multiple protection features including thermal shutdown and short-circuit protection. The device's ruggedized structure maintains stable operation across extreme temperature ranges (-55°C to 150°C junction temperature), ensuring long-term reliability in harsh operating conditions. Its RoHS-compliant packaging and lead-free construction align with modern environmental standards while maintaining superior electrical characteristics.
Real-World Application Versatility
The STU7NM60N's combination of high voltage rating, moderate current capacity, and efficient thermal management makes it particularly well-suited for a wide range of applications including switching power supplies, motor drives, and industrial automation systems. Its TO-251 package provides excellent mechanical stability while maintaining compatibility with standard PCB assembly processes. Designers appreciate its predictable performance characteristics that simplify circuit design and optimization, particularly in high-frequency switching applications where reliability is paramount.
Why Choose STU7NM60N from STMicroelectronics?
As a global leader in semiconductor solutions, STMicroelectronics brings decades of expertise to its MDmesh™ II series MOSFETs. The STU7NM60N exemplifies this heritage through its combination of advanced silicon technology, robust packaging, and comprehensive protection features. When compared to alternative solutions in the 600V power transistor category, this device offers superior performance metrics including lower on-resistance, faster switching characteristics, and enhanced thermal management capabilities - all while maintaining competitive pricing and broad availability.
Tags: Power Management, High Voltage MOSFET, STM Semiconductor, TO-251 Package, Industrial Electronics