STU3N62K3 N-Channel MOSFET 620V 2.7A IPAK
- Brand: STMicroelectronics
- Product Code: STU3N62K3
- Availability: In Stock
$0.20
- Ex Tax: $0.20
STU3N62K3 N-Channel MOSFET: High-Performance Power Management Solution
The STU3N62K3 N-Channel MOSFET from STMicroelectronics represents a significant advancement in power semiconductor technology, offering engineers and designers a robust component for demanding applications. As part of the SuperMESH3™ series, this device combines cutting-edge engineering with proven reliability, delivering exceptional performance across a wide range of industrial and commercial power systems.
Designed for applications requiring high-voltage operation, the STU3N62K3 demonstrates remarkable versatility in power conversion systems. Its 620V drain-to-source voltage rating enables reliable performance in challenging environments, while the 2.7A continuous drain current capability ensures efficient power handling even under demanding conditions. The device's through-hole mounting configuration and I-PAK package provide excellent thermal management and mechanical stability, making it ideal for applications where reliability is paramount.
| Parameter | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 620 V |
| Continuous Drain Current (Id) | 2.7A @ 25°C |
| Rds(On) (Max) | 2.5Ω @ 1.4A, 10V |
| Gate Charge (Qg) | 13 nC @ 10V |
| Operating Temperature | 150°C (TJ) |
At the heart of the STU3N62K3's exceptional performance lies its advanced MOSFET (Metal Oxide) technology. This architecture enables ultra-fast switching characteristics while maintaining minimal conduction losses. The device's ±30V gate-source voltage rating provides enhanced operational flexibility, allowing engineers to optimize performance across various operating conditions. With a maximum input capacitance of 385 pF at 25V, the MOSFET ensures stable operation in high-frequency applications.
The STU3N62K3's design incorporates STMicroelectronics' proprietary SuperMESH3™ technology, which significantly improves performance in power conversion systems. This innovative approach results in superior thermal management capabilities, with a maximum power dissipation rating of 45W at case temperature. The device's 4.5V gate threshold voltage (at 50µA) enables efficient drive characteristics while maintaining excellent switching performance.
Engineers will appreciate the STU3N62K3's versatility across numerous applications, including power supplies, motor control systems, and industrial automation equipment. Its through-hole mounting configuration and TO-251-3 package make it particularly suitable for applications requiring robust mechanical connections and enhanced thermal dissipation. The device's active product status ensures long-term availability for production applications.
When compared to alternative solutions in its class, the STU3N62K3 stands out through its combination of performance characteristics. The 10V drive voltage specification ensures optimal Rds(On) performance while maintaining compatibility with standard gate drive circuits. The device's thermal stability at 150°C operating temperature provides designers with valuable margin for demanding applications.
For power electronics designers seeking to optimize system efficiency, the STU3N62K3 offers a compelling combination of features. Its 13 nC gate charge specification enables fast switching transitions, reducing switching losses in high-frequency applications. The device's packaging in tubes facilitates automated handling and assembly while maintaining component protection during manufacturing processes.
STMicroelectronics' commitment to quality and reliability is evident in the STU3N62K3's comprehensive specification. The device meets the rigorous requirements of modern power electronics applications, offering consistent performance across its operating range. With a maximum operating temperature of 150°C, the MOSFET provides excellent thermal stability in challenging environments.
Whether implementing the STU3N62K3 in power factor correction circuits, DC-DC converters, or motor drive applications, engineers can rely on its consistent performance characteristics. The device's packaging as IPAK (TO-251AA) ensures compatibility with standard PCB layouts while providing excellent thermal conduction paths for efficient heat dissipation.
In summary, the STU3N62K3 N-Channel MOSFET represents a comprehensive solution for modern power electronics applications. Its combination of high-voltage capability, efficient power handling, and advanced packaging makes it an ideal choice for designers seeking reliable performance in demanding environments. With STMicroelectronics' proven track record in semiconductor innovation, this device offers a future-proof solution for power system designers seeking to optimize efficiency and reliability.
Tags: Power Electronics, MOSFET Transistor, High Voltage, Industrial Applications, STM Components