STU3LN62K3 MOSFET N-Channel 620V 2.5A IPAK

STU3LN62K3 MOSFET N-Channel 620V 2.5A IPAK

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High-Performance STU3LN62K3 MOSFET for Demanding Power Applications

In the rapidly evolving landscape of power electronics, the STU3LN62K3 MOSFET emerges as a robust solution for engineers seeking reliability and efficiency in high-voltage environments. This N-Channel SuperMESH3™ transistor, engineered by STMicroelectronics, combines advanced semiconductor technology with industrial-grade specifications to deliver exceptional performance across diverse applications.

Technical Excellence in Design

Operating at a 620V drain-source voltage, the STU3LN62K3 is optimized for power conversion systems requiring precise control and minimal energy loss. With a continuous drain current of 2.5A at 25°C and a remarkably low 3Ω RDS(on) at 1.25A/10V, this device minimizes conduction losses while maintaining thermal stability. The ±30V gate-source voltage tolerance and 17nC gate charge at 10V drive voltage ensure rapid switching capabilities, making it ideal for high-frequency operations in power supplies and motor control circuits.

Engineered for Industrial Reliability

Encased in a TO-251 (IPAK) through-hole package, this obsolete yet widely supported component offers excellent thermal dissipation characteristics. The device's 45W power dissipation rating at case temperature and 150°C maximum operating junction temperature enable sustained performance in harsh environments. Its 386pF input capacitance at 50V VDS and 4.5V gate threshold voltage ensure compatibility with standard gate driver ICs while maintaining operational stability.

ParameterValue
Drain-Source Voltage (VDSS)620V
Continuous Drain Current (ID)2.5A @ 25°C
RDS(on) (Max)3Ω @ 1.25A, 10V
Gate Charge (Qg)17nC @ 10V
Operating Temperature150°C (TJ)

Applications and System Integration

While marked as obsolete, the STU3LN62K3 remains a preferred choice for legacy industrial systems and replacement projects. Its specifications make it particularly suitable for AC/DC power supplies, welding equipment, and industrial motor drives where predictable performance and long-term reliability are critical. The device's packaging in tubes facilitates automated assembly processes while maintaining component integrity during handling.

Technical Support and Design Considerations

Engineers should note the device's 10V drive voltage requirement for optimal RDS(on) performance and implement appropriate gate drive circuitry. When designing thermal management solutions, the 45W power dissipation rating at case temperature should guide heatsink selection. Although newer alternatives exist, the STU3LN62K3's established performance characteristics continue to make it a trusted component in critical infrastructure systems.

Tags: Power Electronics, N-Channel MOSFET, High Voltage, Industrial Applications, TO-251 Package

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