STU11N65M2 MDmesh™ II Plus N-Channel MOSFET 650V 7A IPAK

Revolutionizing Power Management with STU11N65M2 MDmesh™ II Plus MOSFET

In the ever-evolving landscape of power electronics, STMicroelectronics continues to set industry benchmarks with its MDmesh™ II Plus series. The STU11N65M2 N-Channel MOSFET represents a perfect synergy of cutting-edge silicon technology and innovative packaging solutions. Designed for high-voltage applications demanding exceptional efficiency and reliability, this 650V, 7A power transistor delivers unmatched performance in critical sectors ranging from industrial motor drives to renewable energy systems.

Technical Excellence in Power Semiconductor Design

At the heart of this MOSFET lies STMicroelectronics' advanced MDmesh™ technology, which combines optimized planar structure with enhanced field-oxide stabilization. This architecture achieves an impressive 670mΩ R_DS(on) at 10V V_GS, significantly reducing conduction losses while maintaining exceptional thermal stability. The device's 4V gate threshold voltage (V_GS(th)) ensures compatibility with standard logic-level drivers while maintaining robust short-circuit withstand capability.

Engineered for high-frequency switching applications, the STU11N65M2 features a remarkably low 12.5nC gate charge (Q_g) at 10V V_GS, enabling faster switching transitions with minimal energy dissipation. This characteristic proves particularly valuable in modern power conversion systems where efficiency and miniaturization are paramount.

Industrial-Grade Reliability in TO-251 Packaging

Housed in the robust TO-251 (IPAK) package, this MOSFET combines mechanical durability with superior thermal management. The through-hole mounting configuration ensures stable PCB integration while maintaining excellent thermal dissipation characteristics through its 85W (Tc) power dissipation rating. The ±25V gate voltage tolerance provides additional design flexibility while maintaining device protection against voltage transients.

Operating across an extreme temperature range from -55°C to 150°C (T_J), this component meets the demands of harsh industrial environments. Its 410pF input capacitance (C_iss) at 100V V_DS optimizes switching performance while maintaining minimal electromagnetic interference (EMI) generation.

Applications and Performance Benefits

The STU11N65M2 excels in various power conversion applications including:

• Switching power supplies (SMPS)
• Motor control systems
• Uninterruptible power supplies (UPS)
• Renewable energy inverters
• Industrial automation equipment

By combining high-voltage capability with low on-state resistance and fast switching characteristics, this MOSFET enables designers to create compact, energy-efficient systems that meet stringent regulatory requirements. The device's inherent ruggedness against voltage spikes and thermal stress makes it particularly suitable for applications where system longevity and field reliability are critical.

Why Choose MDmesh™ II Plus Technology?

STMicroelectronics' MDmesh™ II Plus series represents the culmination of decades of power semiconductor expertise. This technology platform offers significant advantages over conventional MOSFET structures through:

• Reduced conduction losses via optimized silicon geometry
• Enhanced avalanche energy ratings for improved robustness
• Superior thermal cycling performance
• Advanced packaging materials for long-term reliability

These features translate directly into real-world benefits for system designers seeking to optimize performance while minimizing total cost of ownership. The STU11N65M2 exemplifies this technological advancement by delivering consistent performance across diverse operating conditions.

Tags: Power Electronics, Industrial Applications, Voltage Regulation, Motor Control, Energy Efficiency