STMicroelectronics STS1NK60Z SuperMESH™ N-Channel MOSFET 600V 250mA 8-SOIC

High-Performance N-Channel MOSFET for Demanding Power Applications

The STMicroelectronics

STS1NK60Z

represents a breakthrough in power semiconductor technology, combining exceptional electrical performance with robust reliability. As part of ST's renowned SuperMESH™ family, this N-channel MOSFET delivers cutting-edge efficiency for modern power management systems. With its 600V rating and optimized thermal characteristics, the device serves as a critical component in various industrial and consumer electronics applications.

Engineered for precision power control, this 8-SOIC packaged transistor features advanced silicon technology that minimizes conduction losses while maintaining exceptional switching performance. The device's 15Ω maximum R_DS(on) at 400mA and 10V gate-source voltage ensures minimal power dissipation even under demanding operating conditions. Its ±30V gate-source voltage rating provides enhanced operational safety margins, making it suitable for both standard and high-stress environments.

Technical Excellence in Compact Packaging

The STS1NK60Z's surface-mount 8-SOIC design (3.90mm width) enables efficient board space utilization while maintaining excellent thermal management capabilities. With a maximum power dissipation of 2W at case temperature, this device achieves optimal thermal performance through its optimized die attach technology. The 94pF input capacitance at 25V V_DS ensures fast switching transitions, reducing switching losses in high-frequency applications.

Key technical specifications include:

Parameter	Value
Drain-Source Voltage (VDSS)	600 V
Continuous Drain Current	250 mA (Tc)
RDS(on) @ 10V VGS	15 Ω (max @ 400mA)
Gate Charge (Qg)	6.9 nC @ 10V

Reliable Performance Across Operating Conditions

Designed for industrial-grade reliability, the STS1NK60Z operates seamlessly across extreme temperature ranges from -55°C to 150°C (T_J). Its 4.5V gate threshold voltage (max @ 50µA) ensures stable operation in various drive conditions while maintaining compatibility with standard gate drive circuits. The device's SuperMESH™ technology combines advanced trench gate structures with optimized cell design to achieve superior avalanche energy ratings.

This MOSFET's versatility makes it ideal for applications including:

• Switching power supplies
• Motor control systems
• Industrial automation equipment
• Power factor correction circuits
• Lighting control systems

The device's tape-and-reel packaging format simplifies automated assembly processes, while its RoHS-compliant construction ensures environmental compliance. STMicroelectronics' rigorous quality control processes guarantee consistent performance across production batches, with a minimum ordering quantity of just 1 piece for sample testing requirements.

Tags: Power Electronics, Industrial Components, Semiconductors, Surface Mount Devices