STMicroelectronics STQ2HNK60ZR-AP N-Channel MOSFET 600V 500mA TO-92-3 Package
- Brand: STMicroelectronics
- Product Code: STQ2HNK60ZR-AP
- Availability: In Stock
$0.25
- Ex Tax: $0.25
STMicroelectronics STQ2HNK60ZR-AP: High-Performance N-Channel MOSFET for Demanding Applications
The STMicroelectronics STQ2HNK60ZR-AP N-Channel MOSFET represents a significant advancement in power electronics technology, offering engineers and designers a reliable solution for high-voltage applications requiring precise control and exceptional thermal management. This cutting-edge component combines advanced SuperMESH™ technology with robust TO-92-3 packaging to deliver consistent performance in challenging environments across industrial, automotive, and consumer electronics sectors.
Key Technical Advantages
Engineered for high-voltage operations, this MOSFET maintains a 600V drain-source voltage rating while supporting 500mA continuous drain current at 25°C. The device's 4.8Ω Rds(on) @ 1A, 10V ensures minimal conduction losses, while its ±30V gate-source voltage tolerance provides enhanced protection against voltage spikes. The 15nC gate charge specification enables rapid switching performance, making it ideal for applications requiring efficient power conversion in compact form factors.
| Parameter | Specification |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 500mA |
| Rds(on) | 4.8Ω @ 10V |
| Gate Charge | 15nC |
| Operating Temp | -55°C to 150°C |
SuperMESH™ Technology Benefits
At the core of this MOSFET's superior performance lies STMicroelectronics' proprietary SuperMESH™ technology. This advanced manufacturing process optimizes the device's charge balance characteristics, resulting in reduced on-resistance while maintaining excellent breakdown voltage specifications. The technology's inherent advantages translate to improved energy efficiency, lower thermal generation, and enhanced reliability across extended operating cycles.
Thermal Management Excellence
Designed for through-hole mounting in the TO-92-3 package format, the STQ2HNK60ZR-AP achieves optimal thermal dissipation through its 3W power dissipation rating (Tc). The formed leads configuration simplifies PCB integration while maintaining mechanical stability, making it particularly suitable for applications requiring robust physical connections and reliable heat transfer characteristics.
| Package Type | TO-92-3 |
|---|---|
| Mounting | Through Hole |
| Lead Formation | Formed Leads |
| Thermal Resistance | Optimized for 3W dissipation |
Wide Application Versatility
This MOSFET's combination of high voltage capability and compact packaging makes it particularly well-suited for various applications including: power supplies, motor control circuits, battery management systems, and industrial automation equipment. Its -55°C to 150°C operating temperature range ensures reliable performance in extreme environmental conditions, while the 280pF input capacitance at 25V enables efficient high-frequency switching operations.
Design and Manufacturing Advantages
STMicroelectronics' commitment to quality is evident in the device's 4.5V gate threshold voltage specification (max @ 50µA), which ensures stable operation across varying load conditions. The component's cut tape packaging format simplifies automated assembly processes while maintaining component protection during storage and transportation. With its active product status and comprehensive compliance certifications, the STQ2HNK60ZR-AP represents a future-proof solution for modern electronics design challenges.
Tags: Power Electronics, MOSFET Transistors, High Voltage Components, STMicroelectronics Semiconductors