STMicroelectronics STP8N120K5 MDmesh™ K5 Series N-Channel MOSFET (TO-220 Package)

High-Performance STP8N120K5 N-Channel MOSFET for Demanding Power Applications

STMicroelectronics continues to push the boundaries of power semiconductor innovation with its MDmesh™ K5 Series N-Channel MOSFETs. The STP8N120K5 stands as a testament to this commitment, offering a perfect blend of high-voltage capability, low conduction losses, and exceptional thermal management. Designed for industrial power systems, renewable energy inverters, and automotive electronics, this device delivers reliable performance in the most challenging environments.

Advanced Power Semiconductor Architecture

Engineered with cutting-edge MDmesh™ K5 technology, the STP8N120K5 achieves an impressive 1200V drain-source voltage rating while maintaining a remarkably low on-resistance of just 2Ω. This unique combination enables engineers to design more efficient power conversion systems with reduced energy losses. The device's 6A continuous drain current capability ensures stable operation in high-power applications, while its optimized gate charge characteristics (13.7nC @ 10V) minimize switching losses for improved overall system efficiency.

One of the standout features of this MOSFET is its exceptional thermal performance. The TO-220 package provides excellent heat dissipation capabilities, allowing the device to handle power dissipation up to 130W under typical operating conditions. This thermal robustness, combined with an operating temperature range of -55°C to 150°C, makes it ideal for demanding industrial and automotive applications where reliability is paramount.

Optimized for Modern Power Systems

The STP8N120K5's design addresses the critical needs of modern power electronics engineers. Its high-voltage capability and low conduction losses make it particularly well-suited for industrial motor drives, solar inverters, and electric vehicle charging systems. The device's 10V gate drive compatibility ensures seamless integration with standard control circuits, while its robust packaging meets the mechanical requirements of demanding automotive applications.

As part of STMicroelectronics' MDmesh™ K5 family, this MOSFET benefits from advanced processing techniques that minimize parasitic inductance and improve device longevity. The combination of high breakdown voltage and excellent avalanche energy ratings ensures reliable operation in applications subject to voltage transients and inductive loads.

Design Flexibility and System Integration

Engineers will appreciate the device's balanced performance characteristics that enable both high-efficiency designs and cost-effective implementations. The TO-220-3 package format offers straightforward mounting options while maintaining excellent electrical insulation properties. With its -55°C to 150°C operating temperature range, the STP8N120K5 can be deployed in both harsh industrial environments and space-constrained consumer electronics applications.

This MOSFET's versatility extends to various power topologies including buck/boost converters, half-bridge configurations, and isolated DC-DC power supplies. Its predictable switching characteristics and stable thermal performance simplify the design process, while its compliance with industry-standard packaging specifications facilitates easy component replacement and system upgrades.

Tags: Power Electronics, Industrial Transistors, Automotive Semiconductors, High Voltage MOSFETs, Through Hole Components