STP80NF10FP N-Channel MOSFET 100V 38A TO-220FP Power Transistor
- Brand: STMicroelectronics
- Product Code: STP80NF10FP
- Availability: In Stock
$0.80
- Ex Tax: $0.80
High-Performance STP80NF10FP N-Channel MOSFET for Demanding Power Applications
The STP80NF10FP from STMicroelectronics represents a significant advancement in power transistor technology, delivering exceptional performance for industrial, automotive, and high-efficiency systems. This N-Channel MOSFET combines a robust 100V rating with a continuous drain current capacity of 38A, making it an ideal choice for applications requiring reliable power management in compact designs.
Advanced Technical Specifications
Engineered for superior conductivity and thermal efficiency, the STP80NF10FP features a remarkably low RDS(on) of 15mΩ at 40A and 10V gate-source voltage. This minimized on-resistance reduces power losses while maintaining exceptional switching speeds. The device's 4300 pF input capacitance (Ciss) at 25V ensures stable operation across a wide range of frequencies, complemented by a maximum gate charge of 189nC that enhances control precision in PWM applications.
Parameter | Value |
Drain-Source Voltage | 100V |
Continuous Drain Current | 38A |
RDS(on) Max | 15mΩ |
Package Type | TO-220FP |
Optimized Thermal Management
The TO-220FP package design plays a crucial role in the STP80NF10FP's thermal performance, enabling efficient heat dissipation even under heavy load conditions. With a maximum power dissipation rating of 45W at case temperature, this transistor maintains stability across extreme operating environments (-55°C to 175°C junction temperature range). The through-hole mounting configuration ensures mechanical durability while facilitating easy integration into standard PCB layouts.
Industrial and Automotive Reliability
Designed for mission-critical applications, this STMicroelectronics power transistor meets rigorous automotive and industrial standards. Its ±20V gate-source voltage tolerance provides enhanced protection against voltage transients, while the 4V gate threshold voltage ensures compatibility with standard logic level drivers. The device's STripFET™ II technology combines advanced trench gate structure with optimized cell design to achieve superior avalanche energy ratings, making it particularly suitable for motor control, power supplies, and automotive electronics systems.
Key advantages include:
- Exceptional switching performance with minimal losses
- High avalanche ruggedness for improved system reliability
- Compliant with RoHS and REACH environmental standards
- Designed for surface mount and through-hole compatibility
Design Flexibility
The STP80NF10FP's specifications make it an excellent choice for various applications including DC-DC converters, motor drives, battery management systems, and industrial automation equipment. Its combination of high current capability and low on-state resistance enables designers to create more compact power solutions with reduced cooling requirements. The transistor's inherent stability across temperature extremes also makes it particularly valuable for automotive applications where thermal cycling is common.
Why Choose STMicroelectronics' STripFET™ II Technology?
As part of STMicroelectronics' STripFET™ II family, this MOSFET benefits from decades of power semiconductor innovation. The proprietary manufacturing process delivers enhanced cell density while maintaining exceptional thermal conductivity. This technological foundation ensures that the STP80NF10FP remains at the forefront of power transistor performance, offering designers a reliable component that meets both current and future system requirements.
Tags: Power MOSFET, N-Channel Transistor, TO-220FP Package, Industrial Electronics, Automotive Components