STP4N80K5 N-Channel MOSFET 800V 3A TO-220

Revolutionizing Power Management with STP4N80K5 SuperMESH5™ MOSFET

In the evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its innovative solutions. The STP4N80K5 N-Channel MOSFET exemplifies cutting-edge engineering, combining robust performance with exceptional efficiency. Designed for demanding applications, this device leverages the advanced SuperMESH5™ technology to deliver unparalleled reliability and thermal stability. Whether you're developing industrial power supplies, motor control systems, or renewable energy solutions, the STP4N80K5 offers the versatility and durability required for modern electronic systems.

Technical Excellence in Power Discrete Design

At the core of the STP4N80K5 lies a sophisticated MOSFET architecture optimized for high-voltage operations. With a remarkable 800V drain-source voltage rating and 3A continuous drain current capacity, this device operates seamlessly in extreme electrical environments. Its 2.5Ω R_DS(on) at 1.5A/10V ensures minimal conduction losses, translating to enhanced energy efficiency and reduced thermal stress. The ±30V gate-source voltage tolerance provides exceptional protection against voltage transients, while the 10.5nC gate charge minimizes switching losses for high-frequency applications.

Engineered for real-world performance, this TO-220 packaged MOSFET achieves 60W power dissipation at case temperature, maintaining operational integrity even under continuous heavy loads. The integrated thermal protection spanning -55°C to 150°C junction temperatures ensures reliability across industrial and automotive applications. Its 175pF input capacitance at 100V V_DS enables stable operation in high-speed switching scenarios, making it ideal for modern power conversion systems.

Applications Beyond Conventional Boundaries

The STP4N80K5's versatility shines in diverse power management scenarios. For switch-mode power supplies (SMPS), its fast switching characteristics enable compact designs with improved efficiency metrics. In motor control applications, the device's ruggedness against inductive kickback ensures long-term reliability even during frequent load variations. Renewable energy systems benefit from its high-voltage capability in solar inverters and energy storage systems, while its automotive-qualified thermal performance makes it suitable for electric vehicle charging infrastructure.

What truly distinguishes this MOSFET is its synergy with STMicroelectronics' SuperMESH5™ technology. This proprietary design approach optimizes the device's electric field distribution, dramatically reducing switching losses while maintaining avalanche energy ratings. The result? Power systems that operate cooler, consume less energy, and require fewer thermal management components - ultimately reducing total system cost and complexity.

Why Choose STP4N80K5 Over Alternatives?

When compared to conventional high-voltage MOSFETs, the STP4N80K5 demonstrates clear advantages. Its 5V gate threshold voltage at 100µA enables compatibility with standard logic level gate drivers while maintaining excellent noise immunity. The through-hole TO-220 package offers superior mechanical stability and heat dissipation compared to surface-mount alternatives. Additionally, its RoHS compliance and industrial temperature rating ensure regulatory adherence and operational consistency across diverse environments.

For engineers seeking to optimize their power designs, this device represents the perfect balance between performance and practicality. The combination of STMicroelectronics' proven manufacturing processes and rigorous quality controls guarantees consistent device parameters across production batches, simplifying design verification and production testing phases.

Tags: Power Electronics, N-Channel MOSFET, STM, Industrial Components, TO-220 Devices