STP4N150 N-Channel MOSFET 1500V 4A TO-220AB
- Brand: STMicroelectronics
- Product Code: STP4N150
- Availability: In Stock
$2.00
- Ex Tax: $2.00
High-Performance Power MOSFET for Demanding Applications
STMicroelectronics' STP4N150 N-Channel MOSFET represents a significant advancement in power transistor technology, combining exceptional voltage handling capabilities with efficient thermal management. This high-voltage transistor operates at an impressive 1500V rating while maintaining 4A continuous drain current capacity, making it ideal for industrial power conversion systems, motor control circuits, and high-energy applications where reliability under extreme conditions is paramount. The device's PowerMESH™ technology ensures superior electrical performance through optimized die configuration and advanced packaging techniques.
Technical Excellence in a Compact Form Factor
Engineered with precision in mind, the STP4N150 features a remarkably low Rds(on) of just 7Ω at 2A and 10V gate-source voltage. This exceptional conductivity minimizes power losses and reduces operating temperatures, even in high-stress environments. The transistor's ±30V gate-source voltage tolerance provides enhanced circuit design flexibility while maintaining robust protection against voltage spikes. With its TO-220AB package format, this device offers excellent thermal dissipation characteristics that complement its 160W maximum power dissipation rating.
| Parameter | Value |
|---|---|
| Max Voltage | 1500 V |
| Continuous Current | 4A @ 25°C |
| Gate Charge | 50 nC @ 10V |
| Operating Temp | 150°C (TJ) |
Engineering Versatility
The STP4N150's design philosophy focuses on adaptability across various applications. Its 5V gate threshold voltage at 250µA ensures compatibility with standard logic circuits while maintaining precise switching characteristics. The 1300 pF input capacitance at 25V enables efficient high-frequency operation, making it suitable for modern power supply designs requiring fast switching transitions. The device's through-hole mounting configuration provides mechanical stability in industrial environments subject to vibration and thermal cycling.
As part of STMicroelectronics' acclaimed PowerMESH™ series, this transistor benefits from advanced manufacturing processes that ensure consistent performance across operating conditions. Its thermal resistance characteristics are optimized for both continuous and pulsed operation modes, maintaining stable performance even under dynamic load conditions. The device's inherent ruggedness makes it particularly suitable for applications in renewable energy systems, industrial motor drives, and high-voltage power supplies.
Design and Application Considerations
When implementing the STP4N150 in circuit designs, engineers should consider its optimal operating parameters to maximize performance benefits. The device's 10V drive voltage recommendation ensures minimal conduction losses while maintaining safe operating margins. Its 50 nC gate charge characteristic enables fast switching transitions with moderate driver requirements, balancing speed and efficiency. The TO-220 package format allows for straightforward heatsinking solutions while maintaining electrical isolation requirements.
This MOSFET's versatility extends to various industries including industrial automation, power infrastructure, and test equipment manufacturing. Its combination of high voltage rating and reasonable current capacity makes it particularly effective in applications requiring galvanic isolation and voltage level translation. The device's thermal stability ensures consistent performance in environments with fluctuating ambient temperatures, maintaining reliability over extended operating cycles.
Tags: Power Electronics, Industrial Transistors, High Voltage MOSFET, TO-220 Package, STM Components