STP3N150 PowerMESH™ N-Channel MOSFET 1500V | STMicroelectronics
- Brand: STMicroelectronics
- Product Code: STP3N150
- Availability: In Stock
$1.00
- Ex Tax: $1.00
High-Performance STP3N150 PowerMESH™ N-Channel MOSFET
STMicroelectronics continues to push the boundaries of power semiconductor technology with its STP3N150 PowerMESH™ N-Channel MOSFET. This cutting-edge device combines extreme voltage handling capabilities with efficient thermal management, making it an ideal solution for demanding industrial and high-voltage applications. Designed for engineers seeking reliability and performance in critical power systems, this TO-220AB packaged MOSFET represents the perfect balance between rugged design and modern semiconductor innovation.
Technical Excellence in Power Management
At the heart of the STP3N150's impressive performance lies its 1500V drain-source voltage rating, which sets new standards for high-voltage power switching applications. With a continuous drain current capacity of 2.5A at 25°C, this device maintains exceptional performance even under challenging operating conditions. The advanced PowerMESH™ technology employed in its construction ensures minimal conduction losses through its 9Ω Rds(on) specification at 1.3A and 10V gate-source voltage, making it particularly suitable for high-frequency power conversion systems.
| Parameter | Specification |
|---|---|
| Max Voltage | 1500 V |
| Continuous Current | 2.5A (Tc) |
| Rds(on) Max | 9Ω @ 1.3A, 10V |
| Gate Charge | 29.3 nC @ 10 V |
Advanced Design Features
The STP3N150 incorporates several design innovations that enhance its switching performance and thermal characteristics. With a ±30V gate-source voltage rating, this MOSFET offers robust protection against voltage transients while maintaining operational stability. The device's 5V gate threshold voltage (measured at 250µA) ensures compatibility with standard logic-level control circuits, simplifying integration with modern microcontroller-based systems. Its 939 pF input capacitance (measured at 25V) contributes to faster switching transitions while maintaining low gate drive power requirements.
One of the standout features of this device is its impressive thermal management capabilities. With a maximum power dissipation rating of 140W at case temperature, the TO-220AB package effectively transfers heat to the PCB or heatsink, ensuring reliable operation even in high-power applications. The through-hole mounting configuration provides mechanical stability while maintaining excellent thermal conductivity for sustained high-temperature performance.
Industrial-Grade Reliability
Engineered for demanding environments, the STP3N150 is rated for operation up to 150°C junction temperature, making it suitable for applications in harsh operating conditions. The device's construction incorporates STMicroelectronics' proprietary PowerMESH™ technology that optimizes current distribution and minimizes hotspots within the die structure. This innovative approach results in improved reliability and longer operational lifespan, even under continuous high-power conditions.
Application Versatility
This high-voltage MOSFET finds applications in various power electronics systems including:
- Industrial motor drives
- High-voltage DC power supplies
- Switching mode power supplies (SMPS)
- Uninterruptible power supply (UPS) systems
- Industrial automation equipment
The device's combination of high voltage capability and efficient switching characteristics makes it particularly well-suited for power conversion applications requiring both high dielectric strength and minimal conduction losses. Its TO-220-3 package format offers convenient mounting options while maintaining excellent thermal performance.
Superior Performance Characteristics
When evaluating the STP3N150's specifications, several key metrics stand out for power electronics designers:
| Characteristic | Value | Benefit |
|---|---|---|
| Max Voltage | 1500 V | Extreme dielectric strength |
| Rds(on) | 9Ω | Low conduction losses |
| Gate Charge | 29.3 nC | Fast switching transitions |
| Thermal Resistance | 0.9°C/W | Excellent heat dissipation |
These specifications collectively enable the STP3N150 to deliver exceptional performance in high-voltage switching applications while maintaining operational efficiency and thermal stability. The device's ±30V gate voltage rating provides additional protection against voltage transients, ensuring reliable operation in electrically noisy environments.
Design Considerations
When implementing the STP3N150 in power electronics designs, several factors should be considered to maximize performance:
- Proper heatsinking for high-power applications
- Gate drive circuitry optimization
- PCB layout considerations for high-voltage isolation
- Thermal management strategies
The device's TO-220AB package provides excellent thermal characteristics, but appropriate heatsinking should still be considered for applications approaching its 140W power dissipation limit. Designers should also ensure adequate voltage headroom in their gate drive circuits to fully enhance the device while remaining within its ±30V gate-source voltage specification.
Conclusion
The STP3N150 PowerMESH™ N-Channel MOSFET from STMicroelectronics represents a significant advancement in high-voltage power switching technology. Its combination of extreme voltage handling capabilities, efficient conduction characteristics, and robust thermal management make it an ideal choice for demanding industrial and power electronics applications. With its comprehensive feature set and proven reliability, this device continues STMicroelectronics' tradition of delivering high-quality power semiconductor solutions for modern electronics designers.
Tags: Power Components, Industrial Semiconductors, High Voltage Devices, Electronic Power Supplies, Industrial Electronics