STP34NM60ND N-Channel MOSFET 600V 29A TO-220 - STMicroelectronics

STP34NM60ND N-Channel MOSFET 600V 29A TO-220 - STMicroelectronics

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STP34NM60ND: High-Performance N-Channel MOSFET for Demanding Applications

STMicroelectronics continues to redefine power electronics with its STP34NM60ND MOSFET, a cutting-edge N-Channel transistor designed for high-voltage and high-current applications. This device combines advanced FDmesh™ II technology with robust TO-220 packaging to deliver exceptional performance in industrial, automotive, and power conversion systems. With its 600V breakdown voltage and 29A continuous drain current capability, the STP34NM60ND represents the perfect balance between power handling and efficiency.

Technical Excellence in Power Management

At the heart of this MOSFET lies a sophisticated Metal Oxide Semiconductor design that achieves remarkable electrical characteristics. The device maintains a maximum Rds(on) of just 110mΩ at 14.5A and 10V gate-source voltage, ensuring minimal conduction losses even under heavy loads. Its optimized gate charge (Qg) of 80.4nC at 10V enables fast switching performance, making it ideal for applications requiring high-frequency operation. The ±25V gate-source voltage rating provides enhanced reliability in challenging electrical environments.

Engineered for thermal stability, the STP34NM60ND can dissipate up to 190W in through-hole mounting configurations. Its 150°C maximum operating temperature and 5V gate threshold voltage (at 250µA) ensure reliable operation across diverse conditions while maintaining compatibility with standard logic circuits.

Key Specifications at a Glance
ParameterValue
Drain-Source Voltage (Vdss)600V
Continuous Drain Current (Id)29A
Rds(on) Max110mΩ @ 14.5A, 10V
Gate Charge (Qg)80.4nC @ 10V
Power Dissipation190W
Industrial-Grade Reliability

Manufactured using STMicroelectronics' proven FDmesh™ II process, this transistor features advanced ruggedness characteristics. The TO-220 package provides excellent thermal coupling to heatsinks while maintaining electrical isolation. With its active product status and tube packaging, the STP34NM60ND offers long-term supply stability for critical applications. The device's 2785pF input capacitance at 50V enables efficient paralleling in high-current designs without compromising stability.

Design Flexibility Across Applications

This versatile transistor excels in various power electronics applications, including motor drives, power supplies, and industrial automation systems. Its combination of high voltage capability and low on-resistance makes it particularly suitable for:

• Switch-mode power supplies (SMPS)
• Motor control and drives
• Industrial inverters
• High-voltage DC-DC converters
• Battery management systems

The device's through-hole mounting format ensures reliable mechanical stability in vibration-prone environments, while its compact TO-220-3 packaging offers space-saving advantages in dense PCB layouts.

When selecting power components, engineers value STMicroelectronics' reputation for quality and innovation. The STP34NM60ND continues this tradition with its optimized performance characteristics and rigorous quality testing. Designers can confidently integrate this device into their projects, knowing it meets the demanding standards of modern power electronics while providing the headroom for future design iterations.

Tags: Power Electronics, Semiconductor Device, High Voltage MOSFET, Industrial Components, Electrical Transistor

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