STP33N60DM2 N-Channel MOSFET 600V 24A TO-220

STP33N60DM2: High-Performance Power MOSFET for Demanding Applications

STMicroelectronics' STP33N60DM2 is a cutting-edge N-channel power MOSFET engineered to deliver exceptional performance in high-voltage and high-current applications. With a robust 600 V rating and 24 A continuous drain current capability, this device combines advanced MDmesh™ DM2 technology with a TO-220 package to provide reliable power management solutions for modern electronics.

Advanced Design for Optimal Efficiency

At the core of the STP33N60DM2's performance lies its innovative super-junction technology, which minimizes conduction losses while maintaining excellent switching characteristics. The device achieves an impressive 130 mΩ maximum on-resistance at 12 A and 10 V gate-source voltage, ensuring minimal power dissipation even under heavy loads. This efficiency is further enhanced by its 43 nC gate charge rating, enabling fast switching transitions that reduce energy loss in power conversion circuits.

Robust Specifications for Critical Applications

Engineered for durability, the STP33N60DM2 features a maximum drain-source voltage of 600 V and operates across extreme temperatures from -55°C to 150°C. Its ±25 V gate-source voltage rating provides enhanced protection against voltage spikes, while the through-hole TO-220 package ensures reliable thermal management. With a power dissipation rating of 190 W (Tc), this MOSFET is designed to handle demanding industrial environments where thermal stability is crucial.

Technical Highlights

The device's electrical characteristics make it ideal for various power applications:

Comprehensive Protection Features

This MOSFET incorporates multiple protection mechanisms to ensure long-term reliability. Its 5 V gate threshold voltage at 250 µA provides inherent immunity to false triggering, while the 1870 pF input capacitance at 100 V ensures stable operation in high-frequency switching applications. The device's RoHS compliance and industrial-grade construction make it suitable for a wide range of environments where both performance and reliability are critical.

Application Versatility

The STP33N60DM2 excels in various power electronics applications including:\p>

• Switch-mode power supplies (SMPS)
• Solar inverters and energy conversion systems
• Motor control and industrial automation
• Electric vehicle charging infrastructure
• High-efficiency LED lighting systems

Its combination of high voltage rating, low on-resistance, and robust thermal performance makes it particularly well-suited for applications requiring compact designs with minimal cooling requirements.

Quality and Reliability

Manufactured by STMicroelectronics using their advanced MDmesh™ DM2 technology, the STP33N60DM2 undergoes rigorous quality testing to meet industrial standards. The device's active status in production ensures long-term availability for both prototype and volume designs. With its through-hole mounting configuration and standard TO-220-3 package, it offers easy integration into existing PCB layouts while maintaining excellent thermal performance.

Tags: Power Transistors, High Voltage MOSFET, TO-220 Components, Industrial Electronics, Semiconductor Devices