STP2NK90Z N-Channel MOSFET | STM STMicroelectronics SuperMESH™ Series
- Brand: STMicroelectronics
- Product Code: STP2NK90Z
- Availability: In Stock
$0.70
- Ex Tax: $0.70
STP2NK90Z N-Channel MOSFET: High-Voltage Power Solution for Demanding Applications
The STP2NK90Z N-Channel MOSFET from STMicroelectronics represents a pinnacle of power transistor technology, designed to meet the rigorous demands of high-voltage industrial and automotive systems. This advanced semiconductor device combines cutting-edge SuperMESH™ technology with a robust TO-220AB package, delivering exceptional performance in applications requiring reliable 900V operation and efficient power management.
Technical Excellence in Power Electronics
Engineered for optimal performance, this N-channel power MOSFET features a 900V drain-source voltage rating paired with a 2.1A continuous drain current capacity at 25°C. Its advanced design achieves a remarkably low RDS(on) of just 6.5Ω at 10V gate-source voltage, ensuring minimal conduction losses even in high-stress environments. The device's 27nC gate charge specification enables rapid switching transitions, making it ideal for high-frequency power conversion applications where efficiency is critical.
| Parameter | Specification |
|---|---|
| Max VDS | 900V |
| Continuous ID | 2.1A |
| RDS(on) Max | 6.5Ω @ 1.05A, 10V |
| Gate Charge (Qg) | 27nC @ 10V |
| Operating Temperature | -55°C to 150°C (TJ) |
Advanced Design Features
The STP2NK90Z incorporates STMicroelectronics' proprietary SuperMESH™ technology, which significantly reduces on-resistance while maintaining exceptional voltage handling capabilities. Its through-hole TO-220 package provides excellent thermal dissipation, supporting reliable operation at the specified 70W power dissipation rating. The device's ±30V gate voltage tolerance offers design flexibility, while the 485pF input capacitance at 25V ensures compatibility with standard gate driver circuits.
With a threshold voltage of 4.5V at 50µA, this MOSFET enables efficient control in both traditional and modern power architectures. The device's 900V rating makes it particularly suitable for industrial motor drives, power supplies, and renewable energy systems where high-voltage isolation is critical. Its automotive-qualified construction ensures reliable performance in harsh environments commonly found in vehicle electrical systems.
Application Versatility
This N-channel power transistor excels in a wide range of applications including:
- Industrial motor drives and variable frequency drives
- High-voltage power supplies and battery chargers
- Automotive electronics and electric vehicle systems
- Renewable energy converters (solar inverters, wind turbines)
- Industrial lighting and HVAC systems
The STP2NK90Z's combination of high voltage capability, efficient switching characteristics, and robust packaging makes it an ideal choice for engineers seeking to optimize power density and system efficiency. Its 900V rating provides ample design margin for applications operating in challenging electrical environments, while the low RDS(on) value minimizes conduction losses and associated thermal stress.
Reliability and Performance
Engineered for longevity, this MOSFET maintains stable performance across extreme temperature ranges (-55°C to 150°C). The device's 70W power dissipation rating at case temperature ensures reliable operation in high-power applications. With its advanced packaging technology and optimized die design, the STP2NK90Z offers superior ruggedness against voltage spikes and thermal cycling common in industrial environments.
The transistor's 485pF input capacitance at 25V contributes to efficient gate drive requirements, while the 27nC gate charge specification enables fast switching transitions. These characteristics make it particularly well-suited for applications requiring high-frequency operation without compromising efficiency or thermal management.
Design Considerations
When integrating the STP2NK90Z into circuit designs, engineers should consider its 10V gate drive requirements and implement appropriate gate drive circuitry to ensure optimal switching performance. The device's through-hole TO-220 package requires adequate PCB layout for thermal management, particularly in high-current applications. Proper heatsinking should be employed when operating near the maximum power dissipation rating to maintain long-term reliability.
The device's 900V rating provides significant design flexibility for applications requiring high breakdown voltage, while its low on-resistance characteristics help minimize system losses. Designers should also consider the device's 50µA threshold voltage specification when developing gate drive strategies for optimal performance.
Conclusion
The STP2NK90Z N-Channel MOSFET from STMicroelectronics stands as a testament to advanced power semiconductor engineering. Its combination of high-voltage capability, efficient power management, and robust packaging makes it an ideal solution for demanding industrial and automotive applications. Whether used in power conversion systems, motor drives, or high-voltage power supplies, this device delivers the performance and reliability required for modern power electronics designs seeking to balance efficiency, durability, and cost-effectiveness.
Tags: Power Electronics, High Voltage MOSFET, Industrial Components, Automotive Semiconductors, SuperMESH Technology