STMicroelectronics STP21N65M5 MDmesh™ V N-Channel MOSFET 650V 17A TO-220AB
- Brand: STMicroelectronics
- Product Code: STP21N65M5
- Availability: In Stock
$1.50
- Ex Tax: $1.50
High-Performance STP21N65M5 MDmesh™ V N-Channel MOSFET for Demanding Power Applications
In the rapidly evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its MDmesh™ V series, exemplified by the STP21N65M5 N-Channel MOSFET. This advanced semiconductor solution combines robust electrical characteristics with a reliable TO-220AB package, designed to meet the stringent demands of modern industrial, automotive, and consumer electronics applications.
Technical Excellence in Power Management
Engineered with cutting-edge Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology, the STP21N65M5 delivers exceptional performance metrics. Operating at a 650V drain-source voltage and handling continuous drain current up to 17A at 25°C, this device excels in high-voltage switching scenarios. Its 190mΩ maximum Rds(on) at 8.5A and 10V gate-source voltage minimizes conduction losses, translating to improved energy efficiency and reduced thermal stress in power systems.
| Parameter | Value |
|---|---|
| Max Voltage (Vdss) | 650V |
| Continuous Current (Id) | 17A |
| On-Resistance (Rds(on)) | 190mΩ |
| Gate Charge (Qg) | 50nC |
| Operating Temperature | 150°C (TJ) |
Optimized for Real-World Applications
With a ±25V gate-source voltage rating and 5V threshold voltage at 250µA, the STP21N65M5 offers exceptional gate control flexibility. Its 50nC gate charge at 10V operation ensures fast switching transitions, making it ideal for high-frequency power converters and motor control systems. The device's 125W maximum power dissipation rating enables robust performance in thermally constrained environments.
The TO-220AB package provides excellent thermal dissipation capabilities through its through-hole mounting configuration, while the 1950pF input capacitance at 100V maintains signal integrity in high-speed switching applications. These characteristics position the STP21N65M5 as an optimal choice for power supplies, battery management systems, and industrial automation equipment.
Engineering Reliability and Versatility
As part of STMicroelectronics' MDmesh™ V series, this MOSFET incorporates advanced design features that enhance system reliability. The device's active status and tube packaging ensure long-term availability and ease of integration in production environments. Its 150°C operating junction temperature rating provides designers with thermal headroom for challenging applications.
Whether deployed in renewable energy systems, power factor correction circuits, or high-efficiency DC-DC converters, the STP21N65M5 demonstrates consistent performance across diverse operating conditions. The MOSFET's comprehensive protection characteristics and ruggedized construction make it suitable for both continuous operation and transient-heavy environments.
Tags: Power MOSFET, TO-220 Package, High Voltage Transistor, Industrial Electronics, Semiconductor Devices