STP15N80K5 MOSFET N-Channel 800V 14A TO-220

Revolutionizing Power Management with STP15N80K5 SuperMESH5™ MOSFET

In the ever-evolving landscape of power electronics, STMicroelectronics continues to push boundaries with its SuperMESH5™ technology series. The STP15N80K5 stands as a testament to innovation, offering engineers and designers a robust solution for high-voltage applications. This N-channel power MOSFET combines exceptional performance characteristics with reliable operation, making it an ideal choice for demanding industrial and consumer applications.

Technical Excellence in Power Semiconductor Design

Engineered with ST's advanced SuperMESH5™ technology, the STP15N80K5 delivers groundbreaking performance metrics. Operating at an impressive 800V drain-to-source voltage, this device maintains a remarkable R_DS(on) of just 375mΩ at 7A and 10V gate-source voltage. The optimized design ensures minimal conduction losses while maintaining exceptional thermal stability, with a maximum power dissipation rating of 190W at case temperature.

Key technical specifications include:

Advanced Features for Demanding Applications

The STP15N80K5's design incorporates several features that make it particularly well-suited for modern power systems. Its ±30V gate-source voltage rating provides excellent protection against voltage spikes, while the 1100pF input capacitance at 100V V_DS ensures stable operation in high-frequency environments. The through-hole TO-220 package offers superior thermal dissipation capabilities, maintaining device reliability even under continuous heavy-load conditions.

This power MOSFET's versatility shines in various applications:

• Switching power supplies and converters
• Motor control systems
• Industrial automation equipment
• Renewable energy systems
• High-voltage DC-DC converters

Performance Advantages

The STP15N80K5's unique combination of parameters delivers significant advantages:

1. Energy Efficiency: The low R_DS(on) reduces conduction losses by up to 25% compared to previous generation devices, directly improving system efficiency.

2. Thermal Management: With its 190W power dissipation rating, this MOSFET maintains optimal operating temperatures without requiring excessive heatsinking.

3. Fast Switching: The 32nC gate charge enables rapid transitions, making it suitable for applications operating at frequencies up to several hundred kilohertz.

4. Reliability: The device's rugged design and wide operating temperature range (-55°C to 150°C) ensure dependable performance in challenging environments.

Design Considerations and Implementation

When integrating the STP15N80K5 into circuit designs, engineers should consider several important factors:

The device's 10V drive voltage requirement aligns perfectly with standard gate driver ICs, eliminating the need for specialized voltage supplies. Designers should ensure adequate PCB copper area for thermal management, particularly when operating near the 14A continuous current rating.

For optimal performance:

• Use short gate traces to minimize inductance
• Implement proper decoupling capacitors near the drain-source connections
• Allow for thermal expansion in the mechanical design
• Consider paralleling for higher current requirements

Environmental Compliance and Quality Assurance

As part of STMicroelectronics' commitment to quality and sustainability, the STP15N80K5 meets stringent industry standards. The device complies with RoHS directives and is manufactured using eco-friendly processes. Each unit undergoes rigorous testing to ensure it meets the specified performance parameters, including:

• High-temperature operating life tests
• Temperature cycling validation
• Humidity resistance assessments
• Electromagnetic compatibility verification

This comprehensive quality assurance process ensures consistent performance across the device's operational lifespan.

Comparison with Similar Devices

When compared to alternative solutions in the 800V N-channel MOSFET market, the STP15N80K5 offers several distinct advantages:

These comparative metrics demonstrate the STP15N80K5's superiority in key performance areas, particularly in conduction loss reduction and thermal management.

Future-Proof Power Solution

As power electronics continue evolving toward higher efficiency and miniaturization, the STP15N80K5 represents a forward-looking solution that can meet current demands while providing headroom for future design iterations. Its combination of high voltage capability, low on-resistance, and robust packaging makes it an excellent choice for next-generation power systems.

Whether you're designing industrial power supplies, motor drives, or renewable energy systems, the STP15N80K5 offers the performance, reliability, and efficiency needed to create cutting-edge solutions that meet modern energy standards.

Tags: STP15N80K5, Power MOSFET, N-Channel Transistor, TO-220, High Voltage