STP11N65M5 MOSFET N-Channel 650V 9A TO-220 | STMicroelectronics MDmesh V Series

High-Performance STP11N65M5 MOSFET for Demanding Power Applications

STMicroelectronics continues to redefine power efficiency standards with its MDmesh™ V Series, and the STP11N65M5 MOSFET exemplifies this innovation. Designed for high-voltage switching applications, this N-channel power transistor combines robust performance metrics with advanced thermal management capabilities. The TO-220 package format ensures reliable operation in industrial, automotive, and consumer electronics systems requiring compact yet powerful solutions.

Technical Excellence in Power Transistor Design

Engineered with ST's proprietary MDmesh V technology, the STP11N65M5 achieves an optimal balance between conduction and switching losses. The device's 650 V drain-source voltage rating enables operation in standard and high-voltage power supplies while maintaining exceptional reliability. With a continuous drain current of 9A at 25°C, this MOSFET delivers substantial power handling capacity in a through-hole package format.

Advanced Electrical Characteristics

The STP11N65M5's 480mΩ maximum on-resistance at 4.5A and 10V gate-source voltage significantly reduces conduction losses. This performance metric becomes particularly valuable in applications requiring efficient power conversion, such as switched-mode power supplies (SMPS) and motor control systems. The device's 17 nC gate charge at 10V ensures fast switching transitions while maintaining control over electromagnetic interference (EMI) generation.

Operating at ±25V gate-source voltage, the MOSFET incorporates built-in protection against overvoltage conditions. Its 5V gate threshold voltage at 250µA ensures compatibility with standard logic-level drivers while maintaining noise immunity. The 644 pF input capacitance at 100V drain-source voltage contributes to stable operation in high-frequency switching environments.

Thermal Performance and Reliability

With an 85W maximum power dissipation rating at case temperature, the TO-220 package effectively manages heat in demanding operating conditions. The device's 150°C maximum junction operating temperature provides ample thermal headroom for industrial applications. The through-hole mounting format ensures mechanical stability while facilitating efficient heat transfer to the PCB.

Key design features include:

• Robust 650V breakdown voltage rating
• 10V optimized drive voltage for minimal Rds(on)
• ±25V gate voltage protection

Applications and System Integration

The STP11N65M5's versatile performance profile makes it ideal for various power electronics applications. In consumer electronics, it excels in appliance motor drives and lighting ballasts. Industrial applications benefit from its reliability in welding equipment, power tools, and industrial automation systems. The automotive sector employs this MOSFET in electric vehicle charging systems and 48V mild hybrid architectures.

Design engineers appreciate the device's compatibility with standard PCB layouts while maintaining high-efficiency power conversion. Its thermal performance characteristics reduce the need for additional cooling solutions in most applications. The TO-220 package's standard footprint simplifies integration into existing designs while providing mechanical durability.

Tags: MOSFET Transistor, High Voltage MOSFET, Power Electronics, TO-220 Package, Switching Applications