STP10P6F6 MOSFET P-Channel 60V 10A TO-220 | STMicroelectronics DeepGATE™ STripFET™ VI Power Transistor

STP10P6F6 MOSFET P-Channel 60V 10A TO-220 | STMicroelectronics DeepGATE™ STripFET™ VI Power Transistor

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STP10P6F6: High-Performance P-Channel MOSFET for Demanding Power Applications

STMicroelectronics' STP10P6F6 represents the cutting-edge of power transistor technology in the DeepGATE™ and STripFET™ VI families. This P-channel MOSFET combines advanced silicon innovation with robust TO-220 packaging to deliver exceptional performance in high-voltage switching applications. With its 60V rating and optimized 160mΩ on-resistance, this device sets new standards for efficiency and reliability in modern electronic systems.

Advanced Power Architecture

Engineered with STMicroelectronics' proprietary STripFET™ VI technology, the STP10P6F6 features a revolutionary trench gate structure that minimizes conduction losses while maintaining exceptional thermal stability. The device's 60V drain-source voltage rating makes it ideal for demanding industrial applications requiring robust voltage handling capabilities, while its 10A continuous drain current ensures reliable operation in high-power scenarios.

Key technical advantages include:

  • Ultra-low RDS(on) of 160mΩ at VGS = 10V
  • ±20V gate voltage tolerance for enhanced reliability
  • 6.4nC gate charge for fast switching transitions
  • 340pF input capacitance for stable operation
Thermal Performance & Reliability

The STP10P6F6's TO-220 package provides excellent thermal dissipation characteristics, enabling 30W power dissipation at the case temperature. Its 175°C maximum operating junction temperature ensures reliable performance in harsh environments, while the through-hole mounting configuration offers mechanical stability in industrial equipment. The device's 4V gate threshold voltage at 250µA allows for efficient gate drive optimization.

ParameterValue
Drain-Source Voltage60V
Continuous Drain Current10A
On-Resistance160mΩ
Gate Charge6.4nC
Operating Temperature175°C
Design Flexibility

This power transistor's combination of high voltage capability and low on-resistance makes it particularly suitable for applications such as:

  • Industrial motor control systems
  • Power supply rectification circuits
  • High-efficiency DC-DC converters
  • Automotive power management systems
  • Uninterruptible power supply (UPS) designs

The device's compatibility with standard gate drivers and its inherent avalanche energy rating provide designers with exceptional flexibility in creating robust power circuits. The TO-220-3 package format simplifies heatsinking requirements while maintaining electrical isolation.

Quality & Compliance

As part of STMicroelectronics' industrial-grade component portfolio, the STP10P6F6 undergoes rigorous testing to ensure compliance with the most demanding quality standards. Its last-time-buy status reflects its position as an established solution with proven field performance across diverse applications. The device's packaging in tubes ensures proper handling and storage for production environments.

Tags: Power Electronics, MOSFET Transistors, STripFET VI, TO-220 Components, High Voltage FETs

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