STP10NK80ZFP SuperMESH™ MOSFET N-Channel 800V 9A TO-220FP

STP10NK80ZFP SuperMESH™ MOSFET N-Channel 800V 9A TO-220FP

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High-Performance STP10NK80ZFP SuperMESH™ MOSFET for Demanding Power Applications

STMicroelectronics' STP10NK80ZFP SuperMESH™ N-Channel MOSFET represents the pinnacle of high-voltage power transistor technology, engineered to deliver exceptional performance in industrial and commercial power conversion systems. This TO-220FP packaged device combines advanced semiconductor design with robust thermal management capabilities, making it an ideal choice for engineers seeking reliable switching solutions in high-stress environments.

Technical Excellence in Power Discrete Design

Operating at 800V Vdss with a continuous drain current capacity of 9A, the STP10NK80ZFP excels in applications requiring precise power control. Its optimized Rds On of 900mOhm at 4.5A/10V gate drive ensures minimal conduction losses, while the 72 nC gate charge specification enables fast switching transitions. The device's ±30V gate voltage tolerance provides enhanced design flexibility, and its 2180 pF input capacitance at 25V Vds maintains stability in high-frequency operations.

Key ParameterValue
Max Voltage800 V
Continuous Current9A
Rds On900mΩ @ 4.5A
Gate Charge72 nC
Engineered for Industrial Reliability

The STP10NK80ZFP's Through Hole mounting configuration and TO-220-3 Full Pack case design ensure superior heat dissipation and mechanical stability. With a maximum power dissipation rating of 40W at case temperature and operational capability from -55°C to 150°C, this MOSFET withstands extreme thermal variations. Its SuperMESH™ technology features advanced charge balance architecture that minimizes conduction losses while maintaining avalanche energy ratings.

In power conversion systems like SMPS, motor drives, and industrial automation equipment, this device demonstrates exceptional reliability. The 4.5V gate threshold voltage enables compatibility with standard logic drivers, while the 100µA test current ensures precise switching control. Engineers appreciate the device's inherent short-circuit withstand capability and avalanche ruggedness in demanding applications.

PackageTO-220FP
MountingThrough Hole
Thermal Range-55°C to 150°C
Applications and Implementation

From renewable energy inverters to high-voltage motor control systems, the STP10NK80ZFP delivers consistent performance in various power electronics applications. Its TO-220FP package allows easy heatsinking while maintaining electrical isolation. Designers benefit from its inherent avalanche capability in inductive load switching scenarios and its thermal stability across wide operating temperatures.

The device's 2180 pF input capacitance and optimized switching characteristics make it particularly suited for high-frequency power conversion applications. When integrated with appropriate gate drive circuitry, its 72 nC charge specification enables rapid transitions while maintaining minimal switching losses. The ±30V gate voltage rating also provides design flexibility in protection circuit implementation.

Tags: Power MOSFET, High-Voltage Transistor, TO-220FP, SuperMESH Technology, Discrete Semiconductor

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