STP10NK70ZFP MOSFET N-Channel 700V 8.6A TO-220FP

STP10NK70ZFP MOSFET N-Channel 700V 8.6A TO-220FP

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Revolutionizing Power Management with STP10NK70ZFP SuperMESH™ MOSFET

In the evolving landscape of semiconductor technology, STMicroelectronics continues to redefine performance standards through its innovative SuperMESH™ series. The STP10NK70ZFP stands at the forefront of this revolution, offering engineers and designers a robust solution for high-voltage applications requiring exceptional efficiency and reliability. This N-channel MOSFET combines cutting-edge design with proven durability, making it an indispensable component in modern power electronics systems.

Technical Excellence in Power Semiconductor Design

Engineered for high-voltage environments, the STP10NK70ZFP delivers impressive specifications that meet demanding industrial requirements. With a 700V drain-source voltage rating and 8.6A continuous drain current capacity, this device operates seamlessly in challenging conditions while maintaining optimal thermal performance. Its advanced MOSFET architecture ensures minimal conduction losses through an exceptionally low RDS(on) of 850mΩ at 4.5A and 10V gate-source voltage.

ParameterValue
Max Voltage700 V
Continuous Current8.6A
RDS(on)850mΩ
Operating Temp-55°C to 150°C
Optimized for Demanding Applications

The device's ±30V gate-source voltage tolerance and 4.5V threshold voltage enable stable operation across varying conditions. With 90 nC gate charge and 2000 pF input capacitance, it balances switching speed with control precision. The TO-220FP package ensures efficient heat dissipation while maintaining industry-standard compatibility, making it ideal for power supplies, motor controls, and industrial automation systems.

Superior Thermal Management System

Operating at 35W maximum power dissipation (Tc), the STP10NK70ZFP incorporates STMicroelectronics' proprietary thermal management technology. This innovation allows sustained performance even under continuous load conditions, with operating temperature range spanning from extreme cold (-55°C) to industrial-grade heat (150°C). The through-hole mounting format ensures mechanical stability while facilitating effective heat transfer to the PCB.

Engineers will appreciate the device's inherent reliability, featuring active product status and comprehensive protection characteristics. The absence of special FET features in its specification indicates a focus on core performance parameters rather than superficial enhancements, ensuring consistent behavior in critical applications.

Tags: Power MOSFET, N-Channel Transistor, Industrial Electronics, Voltage Regulator, Semiconductor Component

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