STMicroelectronics STP10NK60Z N-Channel MOSFET - SuperMESH™ Power Transistor
- Brand: STMicroelectronics
- Product Code: STP10NK60Z
- Availability: In Stock
$0.48
- Ex Tax: $0.48
STP10NK60Z: High-Performance N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STP10NK60Z stands as a testament to cutting-edge power semiconductor engineering, combining robust performance metrics with exceptional reliability. This N-channel SuperMESH™ MOSFET represents the culmination of decades of expertise in power transistor design, delivering superior efficiency and thermal management capabilities for modern electronic systems.
Key Technical Advantages
Engineered for high-voltage applications, the STP10NK60Z operates at a remarkable 600V rating while maintaining exceptional conduction efficiency. Its optimized RDS(on) of 750mΩ at 4.5A/10V gate drive strikes the perfect balance between on-state losses and switching performance. The device's advanced gate charge characteristics (70nC @ 10V) enable rapid transitions, making it ideal for high-frequency switching applications where power conversion efficiency is paramount.
The component's ±30V gate voltage tolerance provides exceptional robustness against voltage spikes, while the 4.5V gate threshold voltage ensures reliable operation across varying temperature ranges. With a maximum power dissipation of 115W (Tc) and a wide operating temperature range (-55°C to 150°C), this MOSFET maintains performance integrity in extreme environments.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 10A (Tc) |
| Package Type | TO-220-3 |
| Input Capacitance | 1370pF @ 25V |
Design Excellence in Power Electronics
The STP10NK60Z's Through-Hole mounting configuration and TO-220 packaging combine mechanical durability with excellent thermal dissipation characteristics. This design choice enables seamless integration into traditional PCB layouts while maintaining superior heat management performance. The device's SuperMESH™ technology delivers exceptional avalanche energy ratings and minimal switching losses, making it particularly suitable for applications requiring repetitive stress handling.
Its optimized capacitance characteristics (1370pF Ciss @ 25V) contribute to reduced electromagnetic interference (EMI) generation, while the device's inherent robustness against thermal runaway ensures long-term reliability in critical systems. The component's 250µA gate threshold current specification guarantees stable operation across diverse load conditions.
Industrial Applications
This versatile power transistor excels in numerous demanding applications, including:
- Switch-mode power supplies (SMPS)
- Motor control systems
- Industrial automation equipment
- Renewable energy inverters
- Uninterruptible power supplies (UPS)
The STP10NK60Z's combination of high breakdown voltage and optimized on-resistance makes it particularly well-suited for applications requiring efficient power conversion at elevated operating temperatures. Its TO-220 package allows for easy heatsinking while maintaining electrical isolation requirements.
Performance Verification
Rigorous characterization at 10V gate drive conditions confirms the device's ability to maintain stable performance across its operating range. The 4.5A test current specification ensures accurate representation of real-world conditions, while the comprehensive datasheet parameters provide designers with reliable figures for system optimization. The component's 115W power dissipation rating (Tc) enables operation at high duty cycles without thermal degradation.
With its comprehensive protection features and proven reliability, the STP10NK60Z offers engineers a versatile building block for modern power electronics. The device's compliance with industry-standard packaging specifications simplifies replacement and maintenance operations in field-deployed systems.
Tags: MOSFET, Power Electronics, STMicroelectronics, Industrial Components, TO-220