STP100N6F7 N-Channel MOSFET 60V 100A TO-220
- Brand: STMicroelectronics
- Product Code: STP100N6F7
- Availability: In Stock
$0.36
- Ex Tax: $0.36
STP100N6F7: High-Performance N-Channel MOSFET for Demanding Power Applications
Engineered by STMicroelectronics, the STP100N6F7 is a cutting-edge N-channel MOSFET designed to deliver exceptional performance in high-power systems. With its robust 60V voltage rating and 100A current capacity, this transistor represents the pinnacle of the STripFET™ F7 series, combining advanced silicon technology with reliable thermal management capabilities. Whether in automotive systems, industrial motor controls, or power supply designs, this device offers engineers the performance headroom needed for next-generation applications.
Key Technical Advantages
The STP100N6F7's 5.6mΩ RDS(on) at 50A/10V gate drive sets a new benchmark for conduction efficiency. This remarkably low on-resistance minimizes power losses and reduces operating temperatures, making it ideal for high-frequency switching applications. The device's 125W power dissipation rating at case temperature ensures reliable operation even under sustained heavy loads. Its ±20V gate voltage tolerance provides design flexibility while maintaining robust short-circuit protection.
Engineered with 1980pF input capacitance and 30nC gate charge, this MOSFET achieves optimal switching performance. The 4V gate threshold voltage enables compatibility with standard logic-level drivers while maintaining excellent thermal stability across its -55°C to 175°C operational range. The TO-220 package combines through-hole mechanical stability with efficient heat dissipation characteristics.
| Parameter | Value |
|---|---|
| Max Voltage | 60V |
| Continuous Drain Current | 100A |
| On-Resistance | 5.6mΩ |
| Gate Charge | 30nC |
| Power Dissipation | 125W |
Design Versatility
From automotive powertrains to industrial automation systems, the STP100N6F7 demonstrates exceptional adaptability. Its rugged design excels in motor control inverters, DC-DC converters, and battery management systems. The device's thermal performance enables compact designs with reduced heatsinking requirements, making it particularly valuable in space-constrained applications. The STripFET™ F7 technology combines optimized cell structure with advanced packaging to deliver superior avalanche energy ratings.
This MOSFET's combination of high current capability and low switching losses makes it an ideal choice for modern power electronics designers seeking to improve system efficiency while maintaining reliability. The device's operating temperature range ensures consistent performance in extreme environments, from automotive engine compartments to industrial manufacturing facilities.
Tags: Power Electronics, Industrial Semiconductors, Automotive Components, Through Hole Transistors, High Current MOSFET