STP100N10F7 100V 80A N-Channel MOSFET Transistor
- Brand: STMicroelectronics
- Product Code: STP100N10F7
- Availability: In Stock
$0.51
- Ex Tax: $0.51
High-Performance STP100N10F7 MOSFET for Demanding Power Applications
The STP100N10F7 from STMicroelectronics represents the latest advancement in power MOSFET technology, combining exceptional electrical performance with robust thermal management capabilities. This N-channel transistor, part of the DeepGATE™ and STripFET™ VII series, delivers industry-leading efficiency for high-current applications requiring reliable switching performance in compact form factors.
Technical Excellence in Power Management
Engineered with STMicroelectronics' advanced MOSFET (Metal Oxide) technology, the STP100N10F7 operates at 100V drain-to-source voltage while maintaining an impressive 8mΩ Rds(on) at 40A and 10V gate-source voltage. Its optimized gate charge (61nC @ 10V) ensures minimal switching losses, making it ideal for high-frequency power conversion systems. The device's ±20V gate-source voltage tolerance provides design flexibility while maintaining operational stability.
With a continuous drain current capacity of 80A at 25°C and a maximum power dissipation of 150W (Tc), this TO-220 packaged transistor excels in demanding environments. Its thermal resistance characteristics allow reliable operation across extreme temperatures (-55°C to 175°C), making it suitable for industrial, automotive, and power supply applications.
| Parameter | Specification |
|---|---|
| Max Voltage | 100V |
| Continuous Current | 80A |
| Rds(on) Max | 8mΩ |
| Gate Charge | 61nC |
Broad Application Versatility
The STP100N10F7's through-hole TO-220-3 package combines mechanical durability with efficient heat dissipation. Its 4369pF input capacitance (at 50V) enables smooth operation in DC-DC converters, motor control systems, and battery management circuits. The device's 4.5V gate threshold voltage (at 250µA) ensures compatibility with standard logic drivers while maintaining precise control over switching characteristics.
This MOSFET's active status in ST's product portfolio guarantees long-term supply stability for production environments. The transistor's RoHS-compliant construction and industrial temperature rating make it suitable for both commercial and harsh-environment applications, from renewable energy systems to industrial automation equipment.
Optimized for Modern Power Electronics
The DeepGATE™ technology incorporated in this device reduces on-state resistance while maintaining fast switching characteristics. Its 10V drive voltage optimization ensures minimal conduction losses, contributing to higher system efficiency in power supplies and load-switching applications. The STripFET™ VII design further enhances thermal performance through improved die attach technology, allowing higher current densities without compromising reliability.
In power conversion systems, the STP100N10F7's combination of low gate charge and fast switching characteristics enables designers to achieve higher efficiency at elevated frequencies. This makes it particularly valuable in modern applications requiring miniaturized magnetic components and reduced system size without sacrificing performance.
Tags: High-Power MOSFET, Power Transistor, Industrial Electronics, TO-220 Device, STripFET Technology